Methods for forming transistors

A hybrid transistor is produced to have a substrate with a first (e.g., P type) well region and a second (e.g., N type) well region with an NP or PN junction therebetween. A MOS portion of the hybrid transistor has an (e.g., N type) source region in the first well region and a gate conductor overlyi...

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1. Verfasser:	TRIVEDI VISHAL P
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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