Method of forming a gated diode structure for eliminating RIE damage from cap removal

A method of fabricating a semiconductor structure provided with a plurality of gated-diodes having a silicided anode (p-doped region) and cathode (n-doped region) and a high-K gate stack made of non-silicided gate material, the gated-diodes being adjacent to FETs, each of which having a silicided so...

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Bibliographische Detailangaben

Hauptverfasser:	NARASIMHA SHREESH, CHOU ANTHONY I, MACIEJEWSKI EDWARD P, SLISHER DUSTIN K, KUMAR ARVIND
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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