Semiconductor devices and methods of forming the same

Semiconductor devices and methods of forming the same

Semiconductor devices and methods of forming the same may be provided. The semiconductor devices may include a trench in a substrate. The semiconductor devices may also include a bulk electrode within opposing sidewalls of the trench. The semiconductor devices may further include a liner electrode b...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: MIN JI-YOUNG, HWANG HEEDON, PARK JONGCHUL, JEON INSANG, SHIM WOOGWAN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator MIN JI-YOUNG
HWANG HEEDON
PARK JONGCHUL
JEON INSANG
SHIM WOOGWAN
description Semiconductor devices and methods of forming the same may be provided. The semiconductor devices may include a trench in a substrate. The semiconductor devices may also include a bulk electrode within opposing sidewalls of the trench. The semiconductor devices may further include a liner electrode between the bulk electrode and the opposing sidewalls of the trench. The liner electrode may include a sidewall portion between a sidewall of the bulk electrode and one of the opposing sidewalls of the trench.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9064957B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9064957B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9064957B23</originalsourceid><addsrcrecordid>eNrjZDANTs3NTM7PSylNLskvUkhJLctMTi1WSMxLUchNLcnITylWyE9TSMsvys3MS1coyUhVKE7MTeVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhwZYGZiaWpuZORsZEKAEAGDss9Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor devices and methods of forming the same</title><source>esp@cenet</source><creator>MIN JI-YOUNG ; HWANG HEEDON ; PARK JONGCHUL ; JEON INSANG ; SHIM WOOGWAN</creator><creatorcontrib>MIN JI-YOUNG ; HWANG HEEDON ; PARK JONGCHUL ; JEON INSANG ; SHIM WOOGWAN</creatorcontrib><description>Semiconductor devices and methods of forming the same may be provided. The semiconductor devices may include a trench in a substrate. The semiconductor devices may also include a bulk electrode within opposing sidewalls of the trench. The semiconductor devices may further include a liner electrode between the bulk electrode and the opposing sidewalls of the trench. The liner electrode may include a sidewall portion between a sidewall of the bulk electrode and one of the opposing sidewalls of the trench.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150623&amp;DB=EPODOC&amp;CC=US&amp;NR=9064957B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,782,887,25571,76555</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150623&amp;DB=EPODOC&amp;CC=US&amp;NR=9064957B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MIN JI-YOUNG</creatorcontrib><creatorcontrib>HWANG HEEDON</creatorcontrib><creatorcontrib>PARK JONGCHUL</creatorcontrib><creatorcontrib>JEON INSANG</creatorcontrib><creatorcontrib>SHIM WOOGWAN</creatorcontrib><title>Semiconductor devices and methods of forming the same</title><description>Semiconductor devices and methods of forming the same may be provided. The semiconductor devices may include a trench in a substrate. The semiconductor devices may also include a bulk electrode within opposing sidewalls of the trench. The semiconductor devices may further include a liner electrode between the bulk electrode and the opposing sidewalls of the trench. The liner electrode may include a sidewall portion between a sidewall of the bulk electrode and one of the opposing sidewalls of the trench.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDANTs3NTM7PSylNLskvUkhJLctMTi1WSMxLUchNLcnITylWyE9TSMsvys3MS1coyUhVKE7MTeVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhwZYGZiaWpuZORsZEKAEAGDss9Q</recordid><startdate>20150623</startdate><enddate>20150623</enddate><creator>MIN JI-YOUNG</creator><creator>HWANG HEEDON</creator><creator>PARK JONGCHUL</creator><creator>JEON INSANG</creator><creator>SHIM WOOGWAN</creator><scope>EVB</scope></search><sort><creationdate>20150623</creationdate><title>Semiconductor devices and methods of forming the same</title><author>MIN JI-YOUNG ; HWANG HEEDON ; PARK JONGCHUL ; JEON INSANG ; SHIM WOOGWAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9064957B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MIN JI-YOUNG</creatorcontrib><creatorcontrib>HWANG HEEDON</creatorcontrib><creatorcontrib>PARK JONGCHUL</creatorcontrib><creatorcontrib>JEON INSANG</creatorcontrib><creatorcontrib>SHIM WOOGWAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MIN JI-YOUNG</au><au>HWANG HEEDON</au><au>PARK JONGCHUL</au><au>JEON INSANG</au><au>SHIM WOOGWAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor devices and methods of forming the same</title><date>2015-06-23</date><risdate>2015</risdate><abstract>Semiconductor devices and methods of forming the same may be provided. The semiconductor devices may include a trench in a substrate. The semiconductor devices may also include a bulk electrode within opposing sidewalls of the trench. The semiconductor devices may further include a liner electrode between the bulk electrode and the opposing sidewalls of the trench. The liner electrode may include a sidewall portion between a sidewall of the bulk electrode and one of the opposing sidewalls of the trench.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US9064957B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor devices and methods of forming the same
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-04T15%3A43%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MIN%20JI-YOUNG&rft.date=2015-06-23&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS9064957B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true