Methods of forming bulk FinFET devices so as to reduce punch through leakage currents

Disclosed are methods of forming bulk FinFET semiconductor devices to reduce punch through leakage currents. One example includes forming a plurality of trenches in a semiconducting substrate to define a plurality of spaced-apart fins, forming a doped layer of insulating material in the trenches, wh...

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Hauptverfasser:	JAKUBOWSKI FRANK, FAUL JUERGEN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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