Semiconductor device with pocket regions and method of manufacturing the same
A semiconductor device includes a first pocket region and a second pocket region. The source region includes a first extension region having a concentration peak located at a first depth from a surface of the semiconductor substrate, and the first pocket region has a concentration peak located deepe...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A semiconductor device includes a first pocket region and a second pocket region. The source region includes a first extension region having a concentration peak located at a first depth from a surface of the semiconductor substrate, and the first pocket region has a concentration peak located deeper than the first depth, and the drain region includes a second extension region having a concentration peak located at a second depth from the surface of the semiconductor substrate, and the second pocket region has a concentration peak located shallower than the second depth. |
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