Memory device having multiple dielectric gate stacks and related methods

A memory device may include a semiconductor substrate, and a memory transistor in the semiconductor substrate. The memory transistor may include source and drain regions in the semiconductor substrate and a channel region therebetween, and a gate stack. The gate stack may include a first dielectric...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LIU QING, EDGE LISA, KHARE PRASANNA, ALLEGRET-MARET STEPHANE, LOUBET NICOLAS, CHENG KANGGUO, JAGANNATHAN HEMANTH, DORIS BRUCE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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