Dummy structures and methods

Dummy structures and methods

A semiconductor device and a method of making a semiconductor device are disclosed. The method of manufacturing a semiconductor device comprises forming a material layer on a substrate, patterning a first semi-global region with a first main pattern and patterning a second semi-global region with a...

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Hauptverfasser: HUEBINGER FRANK, KAEMMER KERSTIN, ROTHENHAEUSSER STEFFEN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator HUEBINGER FRANK
KAEMMER KERSTIN
ROTHENHAEUSSER STEFFEN
description A semiconductor device and a method of making a semiconductor device are disclosed. The method of manufacturing a semiconductor device comprises forming a material layer on a substrate, patterning a first semi-global region with a first main pattern and patterning a second semi-global region with a second main pattern, wherein the first main pattern is different than the second main pattern. The method further comprises introducing a first dummy pattern in the first semi-global region so that a first sidewall area surface density of the first main pattern and the first dummy pattern in the first semi-global region and a second sidewall area surface density of the second main pattern in the second semi-global region are substantially a same density.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Dummy structures and methods
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