Semiconductor device with an insulating structure for insulating an electrode from a semiconductor body

Semiconductor device with an insulating structure for insulating an electrode from a semiconductor body

A semiconductor device includes an electrode arranged on a main surface of a semiconductor body and an insulating structure insulating the electrode from the semiconductor body. The insulating structure includes in a vertical cross-section a gate dielectric portion forming a first horizontal interfa...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: STRASSER MARC, O'RIAIN LINCOLN, GEBHARDT KARL-HEINZ, RUDOLF RALF
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator STRASSER MARC
O'RIAIN LINCOLN
GEBHARDT KARL-HEINZ
RUDOLF RALF
description A semiconductor device includes an electrode arranged on a main surface of a semiconductor body and an insulating structure insulating the electrode from the semiconductor body. The insulating structure includes in a vertical cross-section a gate dielectric portion forming a first horizontal interface at least with a drift region of the device and having a first maximum vertical extension between the first horizontal interface and the electrode, and a field dielectric portion forming with the drift region second, third and fourth horizontal interfaces. The second through fourth horizontal interfaces are arranged below the main surface. The third horizontal interface is arranged between the second and fourth horizontal interfaces. A second maximum vertical extension is larger than the first maximum vertical extension and a third maximum vertical extension is larger than the second maximum vertical extension. The electrode only partially overlaps the third horizontal interface.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9000520B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9000520B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9000520B23</originalsourceid><addsrcrecordid>eNqNzLEKwjAUheEsDqK-w30BIVQcXBXFvTqXmJzWQJpbkhvFtzeDg25OZ_g_zlwNLUZvObpihRM5PLwFPb3cyUTyMZdgxMeBsqRKSgL11X2FyhBgJbGrLfFIhvLP6Y3da6lmvQkZq88uFJ2Ol8N5jYk75MlYREh3bXda622j983mD_IGuRlAdg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device with an insulating structure for insulating an electrode from a semiconductor body</title><source>esp@cenet</source><creator>STRASSER MARC ; O'RIAIN LINCOLN ; GEBHARDT KARL-HEINZ ; RUDOLF RALF</creator><creatorcontrib>STRASSER MARC ; O'RIAIN LINCOLN ; GEBHARDT KARL-HEINZ ; RUDOLF RALF</creatorcontrib><description>A semiconductor device includes an electrode arranged on a main surface of a semiconductor body and an insulating structure insulating the electrode from the semiconductor body. The insulating structure includes in a vertical cross-section a gate dielectric portion forming a first horizontal interface at least with a drift region of the device and having a first maximum vertical extension between the first horizontal interface and the electrode, and a field dielectric portion forming with the drift region second, third and fourth horizontal interfaces. The second through fourth horizontal interfaces are arranged below the main surface. The third horizontal interface is arranged between the second and fourth horizontal interfaces. A second maximum vertical extension is larger than the first maximum vertical extension and a third maximum vertical extension is larger than the second maximum vertical extension. The electrode only partially overlaps the third horizontal interface.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150407&amp;DB=EPODOC&amp;CC=US&amp;NR=9000520B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150407&amp;DB=EPODOC&amp;CC=US&amp;NR=9000520B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>STRASSER MARC</creatorcontrib><creatorcontrib>O'RIAIN LINCOLN</creatorcontrib><creatorcontrib>GEBHARDT KARL-HEINZ</creatorcontrib><creatorcontrib>RUDOLF RALF</creatorcontrib><title>Semiconductor device with an insulating structure for insulating an electrode from a semiconductor body</title><description>A semiconductor device includes an electrode arranged on a main surface of a semiconductor body and an insulating structure insulating the electrode from the semiconductor body. The insulating structure includes in a vertical cross-section a gate dielectric portion forming a first horizontal interface at least with a drift region of the device and having a first maximum vertical extension between the first horizontal interface and the electrode, and a field dielectric portion forming with the drift region second, third and fourth horizontal interfaces. The second through fourth horizontal interfaces are arranged below the main surface. The third horizontal interface is arranged between the second and fourth horizontal interfaces. A second maximum vertical extension is larger than the first maximum vertical extension and a third maximum vertical extension is larger than the second maximum vertical extension. The electrode only partially overlaps the third horizontal interface.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNzLEKwjAUheEsDqK-w30BIVQcXBXFvTqXmJzWQJpbkhvFtzeDg25OZ_g_zlwNLUZvObpihRM5PLwFPb3cyUTyMZdgxMeBsqRKSgL11X2FyhBgJbGrLfFIhvLP6Y3da6lmvQkZq88uFJ2Ol8N5jYk75MlYREh3bXda622j983mD_IGuRlAdg</recordid><startdate>20150407</startdate><enddate>20150407</enddate><creator>STRASSER MARC</creator><creator>O'RIAIN LINCOLN</creator><creator>GEBHARDT KARL-HEINZ</creator><creator>RUDOLF RALF</creator><scope>EVB</scope></search><sort><creationdate>20150407</creationdate><title>Semiconductor device with an insulating structure for insulating an electrode from a semiconductor body</title><author>STRASSER MARC ; O'RIAIN LINCOLN ; GEBHARDT KARL-HEINZ ; RUDOLF RALF</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9000520B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>STRASSER MARC</creatorcontrib><creatorcontrib>O'RIAIN LINCOLN</creatorcontrib><creatorcontrib>GEBHARDT KARL-HEINZ</creatorcontrib><creatorcontrib>RUDOLF RALF</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>STRASSER MARC</au><au>O'RIAIN LINCOLN</au><au>GEBHARDT KARL-HEINZ</au><au>RUDOLF RALF</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device with an insulating structure for insulating an electrode from a semiconductor body</title><date>2015-04-07</date><risdate>2015</risdate><abstract>A semiconductor device includes an electrode arranged on a main surface of a semiconductor body and an insulating structure insulating the electrode from the semiconductor body. The insulating structure includes in a vertical cross-section a gate dielectric portion forming a first horizontal interface at least with a drift region of the device and having a first maximum vertical extension between the first horizontal interface and the electrode, and a field dielectric portion forming with the drift region second, third and fourth horizontal interfaces. The second through fourth horizontal interfaces are arranged below the main surface. The third horizontal interface is arranged between the second and fourth horizontal interfaces. A second maximum vertical extension is larger than the first maximum vertical extension and a third maximum vertical extension is larger than the second maximum vertical extension. The electrode only partially overlaps the third horizontal interface.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US9000520B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor device with an insulating structure for insulating an electrode from a semiconductor body
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T20%3A22%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=STRASSER%20MARC&rft.date=2015-04-07&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS9000520B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true