Field effect transistor-based bio sensor

An apparatus comprises: a sensing element formed on a buried oxide layer of a substrate and providing communication between a source region and a drain region; a gate dielectric layer on the sensing element, the gate dielectric layer defining a sensing surface on the sensing element; a passive surfa...

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Bibliographische Detailangaben
Hauptverfasser: ZAFAR SUFI, JAGTIANI ASHISH, AFZALI-ARDAKANI ALI, D'EMIC CHRISTOPHER P
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:An apparatus comprises: a sensing element formed on a buried oxide layer of a substrate and providing communication between a source region and a drain region; a gate dielectric layer on the sensing element, the gate dielectric layer defining a sensing surface on the sensing element; a passive surface surrounding the sensing surface; and a compound bound to the sensing surface and not bound to the passive surface, the compound having a ligand specifically configured to preferentially bind a target molecule to be sensed. An electrolyte solution in contact with the sensing surface and the passive surface forms a top gate of the apparatus.