Plasma processing method and plasma processing apparatus

A plasma processing method is used to etch a multilayered material having a stacked structure, in which a first magnetic layer, an insulating layer, a second magnetic layer, and a mask material are stacked in sequence, in a plasma processing apparatus including a processing chamber that partitions a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: NISHIMURA EIICHI, KOTSUGI TADASHI, SONE TAKASHI
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!