Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same

A method for manufacturing vertically structured Group III nitride semiconductor LED chips includes a step of forming a light emitting laminate on a growth substrate; a step of forming a plurality of separate light emitting structures by partially removing the light emitting laminate to partially ex...

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Bibliographische Detailangaben
Hauptverfasser:	JANG PIL GUK, TOBA RYUICHI, LEE SEOG WOO, CHO MEOUNG WHAN, KADOWAKI YOSHITAKA, TOYOTA TATSUNORI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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