Substrate processing method and substrate processing apparatus

A substrate processing method for removing an Si-based film on a surface of a substrate accommodated in a processing chamber includes a first step in which the Si-based film on the surface of the substrate is transformed into a reaction product by a gas containing a halogen element and an alkaline g...

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Hauptverfasser:	UGAJIN HAJIME, TOZAWA SHIGEKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DECORATIVE ARTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MOSAICS PAPERHANGING PERFORMING OPERATIONS PRODUCING DECORATIVE EFFECTS SEMICONDUCTOR DEVICES TARSIA WORK TRANSPORTING
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creator	UGAJIN HAJIME TOZAWA SHIGEKI
description	A substrate processing method for removing an Si-based film on a surface of a substrate accommodated in a processing chamber includes a first step in which the Si-based film on the surface of the substrate is transformed into a reaction product by a gas containing a halogen element and an alkaline gas in the processing chamber and a second step in which the reaction product is vaporized in the processing chamber which is depressurized to a pressure lower than a pressure during the first step. The first step and the second step are repeated two or more times.
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subjects	BASIC ELECTRIC ELEMENTS DECORATIVE ARTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MOSAICS PAPERHANGING PERFORMING OPERATIONS PRODUCING DECORATIVE EFFECTS SEMICONDUCTOR DEVICES TARSIA WORK TRANSPORTING
title	Substrate processing method and substrate processing apparatus
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