Method for forming through silicon via with wafer backside protection

Semiconductor devices with through silicon vias (TSVs) are formed without copper contamination. Embodiments include exposing a passivation layer surrounding a bottom portion of a TSV in a silicon substrate, forming a silicon composite layer over the exposed passivation layer and over a bottom surfac...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SEE ALEX KAI HUNG, CONG HAI, TAN YUN LING, LEONG LUP SAN, RAO XUESONG, ZOU ZHENG, LIU HUANG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!