Overlapping contacts for semiconductor device

A method of forming overlapping contacts in a semiconductor device includes forming a first contact in a dielectric layer; etching the dielectric layer to form a recess adjacent to the first contact and removing a top portion of the first contact while etching the dielectric layer, wherein a bottom...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HILSCHER DAVID F, HALL LINDSEY, ENGEL BRETT H, SOSS STEVEN R, KNARR RANDOLPH F, WALLNER JIN Z
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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