Methods of forming semiconductor device with self-aligned contact elements and the resulting devices

One method discloses performing an etching process to form a contact opening in a layer of insulating material above at least a portion of a source/drain, region wherein, after the completion of the etching process, a portion of a gate structure of the transistor is exposed, selectively forming an o...

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Bibliographische Detailangaben

Hauptverfasser:	IACOPONI JOHN A, CAI XIUYU, XIE RUILONG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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