Method for producing P-type nitride semiconductor layer

Method for producing P-type nitride semiconductor layer

A method of manufacturing a p type nitride semiconductor layer doped with carbon in a highly reproducible manner with an increased productivity is provided. The method includes supplying an III-group material gas for a predetermined time period T1, supplying a V-group material gas containing a carbo...

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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description A method of manufacturing a p type nitride semiconductor layer doped with carbon in a highly reproducible manner with an increased productivity is provided. The method includes supplying an III-group material gas for a predetermined time period T1, supplying a V-group material gas containing a carbon source for a predetermined time period T2 when a predetermined time period t1 (t1+T2>T1) elapses after the supply of the III-group material gas begins, repeating the step of supplying the III-group material gas and the step of supplying the V-group material gas when a predetermined time period t2 (t1+T2−t2>T1) elapses after the supply of the V-group material gas begins, and thus forming an AlxGa1-xN semiconductor layer (0
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for producing P-type nitride semiconductor layer
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