Method for producing P-type nitride semiconductor layer
A method of manufacturing a p type nitride semiconductor layer doped with carbon in a highly reproducible manner with an increased productivity is provided. The method includes supplying an III-group material gas for a predetermined time period T1, supplying a V-group material gas containing a carbo...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method of manufacturing a p type nitride semiconductor layer doped with carbon in a highly reproducible manner with an increased productivity is provided. The method includes supplying an III-group material gas for a predetermined time period T1, supplying a V-group material gas containing a carbon source for a predetermined time period T2 when a predetermined time period t1 (t1+T2>T1) elapses after the supply of the III-group material gas begins, repeating the step of supplying the III-group material gas and the step of supplying the V-group material gas when a predetermined time period t2 (t1+T2−t2>T1) elapses after the supply of the V-group material gas begins, and thus forming an AlxGa1-xN semiconductor layer (0 |
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