Formation of alpha particle shields in chip packaging

Formation of alpha particle shields in chip packaging

A structure and system for forming the structure. The structure includes a semiconductor chip and an interposing shield having a top side and a bottom side. The semiconductor chip includes N chip electric pads, wherein N is a positive integer of at least 2. The N chip electric pads are electrically...

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Hauptverfasser: RODBELL KENNETH P, ANDRY PAUL STEPHEN, WISNIEFF ROBERT L, CABRAL, JR. CYRIL
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator RODBELL KENNETH P
ANDRY PAUL STEPHEN
WISNIEFF ROBERT L
CABRAL, JR. CYRIL
description A structure and system for forming the structure. The structure includes a semiconductor chip and an interposing shield having a top side and a bottom side. The semiconductor chip includes N chip electric pads, wherein N is a positive integer of at least 2. The N chip electric pads are electrically connected to a plurality of devices on the semiconductor chip. The electric shield includes 2N electric conductors and N shield electric pads. Each shield electrical pad is in electrical contact and direct physical contact with a corresponding pair of electric conductors of the 2N electric conductors. The interposing shield includes a shield material. The shield material includes a first semiconductor material. The semiconductor chip is bonded to the top side of the interposing shield. Each chip electric pads is in electrical contact and direct physical contact with a corresponding shield electrical pad of the N shield electric pads.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8928145B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8928145B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8928145B23</originalsourceid><addsrcrecordid>eNrjZDB1yy_KTSzJzM9TyE9TSMwpyEhUKEgsKslMzklVKM7ITM1JKVbIzFNIzsgsAEokZyemZ-al8zCwpiXmFKfyQmluBgU31xBnD93Ugvz41GKgutS81JL40GALSyMLQxNTJyNjIpQAAPtQLMI</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Formation of alpha particle shields in chip packaging</title><source>esp@cenet</source><creator>RODBELL KENNETH P ; ANDRY PAUL STEPHEN ; WISNIEFF ROBERT L ; CABRAL, JR. CYRIL</creator><creatorcontrib>RODBELL KENNETH P ; ANDRY PAUL STEPHEN ; WISNIEFF ROBERT L ; CABRAL, JR. CYRIL</creatorcontrib><description>A structure and system for forming the structure. The structure includes a semiconductor chip and an interposing shield having a top side and a bottom side. The semiconductor chip includes N chip electric pads, wherein N is a positive integer of at least 2. The N chip electric pads are electrically connected to a plurality of devices on the semiconductor chip. The electric shield includes 2N electric conductors and N shield electric pads. Each shield electrical pad is in electrical contact and direct physical contact with a corresponding pair of electric conductors of the 2N electric conductors. The interposing shield includes a shield material. The shield material includes a first semiconductor material. The semiconductor chip is bonded to the top side of the interposing shield. Each chip electric pads is in electrical contact and direct physical contact with a corresponding shield electrical pad of the N shield electric pads.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150106&amp;DB=EPODOC&amp;CC=US&amp;NR=8928145B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25565,76548</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150106&amp;DB=EPODOC&amp;CC=US&amp;NR=8928145B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RODBELL KENNETH P</creatorcontrib><creatorcontrib>ANDRY PAUL STEPHEN</creatorcontrib><creatorcontrib>WISNIEFF ROBERT L</creatorcontrib><creatorcontrib>CABRAL, JR. CYRIL</creatorcontrib><title>Formation of alpha particle shields in chip packaging</title><description>A structure and system for forming the structure. The structure includes a semiconductor chip and an interposing shield having a top side and a bottom side. The semiconductor chip includes N chip electric pads, wherein N is a positive integer of at least 2. The N chip electric pads are electrically connected to a plurality of devices on the semiconductor chip. The electric shield includes 2N electric conductors and N shield electric pads. Each shield electrical pad is in electrical contact and direct physical contact with a corresponding pair of electric conductors of the 2N electric conductors. The interposing shield includes a shield material. The shield material includes a first semiconductor material. The semiconductor chip is bonded to the top side of the interposing shield. Each chip electric pads is in electrical contact and direct physical contact with a corresponding shield electrical pad of the N shield electric pads.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDB1yy_KTSzJzM9TyE9TSMwpyEhUKEgsKslMzklVKM7ITM1JKVbIzFNIzsgsAEokZyemZ-al8zCwpiXmFKfyQmluBgU31xBnD93Ugvz41GKgutS81JL40GALSyMLQxNTJyNjIpQAAPtQLMI</recordid><startdate>20150106</startdate><enddate>20150106</enddate><creator>RODBELL KENNETH P</creator><creator>ANDRY PAUL STEPHEN</creator><creator>WISNIEFF ROBERT L</creator><creator>CABRAL, JR. CYRIL</creator><scope>EVB</scope></search><sort><creationdate>20150106</creationdate><title>Formation of alpha particle shields in chip packaging</title><author>RODBELL KENNETH P ; ANDRY PAUL STEPHEN ; WISNIEFF ROBERT L ; CABRAL, JR. CYRIL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8928145B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>RODBELL KENNETH P</creatorcontrib><creatorcontrib>ANDRY PAUL STEPHEN</creatorcontrib><creatorcontrib>WISNIEFF ROBERT L</creatorcontrib><creatorcontrib>CABRAL, JR. CYRIL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RODBELL KENNETH P</au><au>ANDRY PAUL STEPHEN</au><au>WISNIEFF ROBERT L</au><au>CABRAL, JR. CYRIL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Formation of alpha particle shields in chip packaging</title><date>2015-01-06</date><risdate>2015</risdate><abstract>A structure and system for forming the structure. The structure includes a semiconductor chip and an interposing shield having a top side and a bottom side. The semiconductor chip includes N chip electric pads, wherein N is a positive integer of at least 2. The N chip electric pads are electrically connected to a plurality of devices on the semiconductor chip. The electric shield includes 2N electric conductors and N shield electric pads. Each shield electrical pad is in electrical contact and direct physical contact with a corresponding pair of electric conductors of the 2N electric conductors. The interposing shield includes a shield material. The shield material includes a first semiconductor material. The semiconductor chip is bonded to the top side of the interposing shield. Each chip electric pads is in electrical contact and direct physical contact with a corresponding shield electrical pad of the N shield electric pads.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Formation of alpha particle shields in chip packaging
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-18T14%3A55%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=RODBELL%20KENNETH%20P&rft.date=2015-01-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS8928145B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true