High on-state breakdown heterojunction bipolar transistor

A heterojunction bipolar transistor (HBT) is provided with an improved on-state breakdown voltage VCE. The improvement of the on-state breakdown voltage for the HBT improves the output power characteristics of the HBT and the ability of the HBT to withstand large impedance mismatch (large VSWR). The...

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Bibliographische Detailangaben

Hauptverfasser:	PAN NOREN, WIBOWO ANDREE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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