Method and device for producing a compound semiconductor layer
In a method for producing a I-III-VI compound semiconductor layer, a substrate is provided with a coating which has a metallic precursor layer. The coating is kept, for the duration of a process time, at temperatures of at least 350 degrees C. and the metallic precursor layer, in the presence of a c...
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| creator | KOETSCHAU IMMO SCHMID DIETER |
| description | In a method for producing a I-III-VI compound semiconductor layer, a substrate is provided with a coating which has a metallic precursor layer. The coating is kept, for the duration of a process time, at temperatures of at least 350 degrees C. and the metallic precursor layer, in the presence of a chalcogen at an ambient pressure of between 500 mbar and 1500 mbar, is converted into a compound semiconductor layer. The coating is kept at temperatures for the duration of an activation time which attain at least an activation barrier temperature, whereby as the activation barrier temperature a value of at least 600° C. is selected. |
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The coating is kept, for the duration of a process time, at temperatures of at least 350 degrees C. and the metallic precursor layer, in the presence of a chalcogen at an ambient pressure of between 500 mbar and 1500 mbar, is converted into a compound semiconductor layer. The coating is kept at temperatures for the duration of an activation time which attain at least an activation barrier temperature, whereby as the activation barrier temperature a value of at least 600° C. is selected.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; BLASTING ; DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS,IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KINDOF FURNACE ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FURNACES ; FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL ; HEATING ; KILNS ; LIGHTING ; MECHANICAL ENGINEERING ; OPEN SINTERING OR LIKE APPARATUS ; OVENS ; RETORTS ; SEMICONDUCTOR DEVICES ; WEAPONS</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20141209&DB=EPODOC&CC=US&NR=8907253B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20141209&DB=EPODOC&CC=US&NR=8907253B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KOETSCHAU IMMO</creatorcontrib><creatorcontrib>SCHMID DIETER</creatorcontrib><title>Method and device for producing a compound semiconductor layer</title><description>In a method for producing a I-III-VI compound semiconductor layer, a substrate is provided with a coating which has a metallic precursor layer. 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The coating is kept, for the duration of a process time, at temperatures of at least 350 degrees C. and the metallic precursor layer, in the presence of a chalcogen at an ambient pressure of between 500 mbar and 1500 mbar, is converted into a compound semiconductor layer. The coating is kept at temperatures for the duration of an activation time which attain at least an activation barrier temperature, whereby as the activation barrier temperature a value of at least 600° C. is selected.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS BLASTING DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS,IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KINDOF FURNACE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FURNACES FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL HEATING KILNS LIGHTING MECHANICAL ENGINEERING OPEN SINTERING OR LIKE APPARATUS OVENS RETORTS SEMICONDUCTOR DEVICES WEAPONS |
| title | Method and device for producing a compound semiconductor layer |
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