Integrated circuit device with well controlled surface proximity and method of manufacturing same

Integrated circuit device with well controlled surface proximity and method of manufacturing same

An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of integrated circuit device. In an embodiment, the method achieves improved control by forming a doped region a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: OUYANG HUI, CHEN YEN-MING, CHIU YUAN-HUNG, TSAI MING-HUAN, CHENG CHUN-FAI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of integrated circuit device. In an embodiment, the method achieves improved control by forming a doped region and a lightly doped source and drain (LDD) region in a source and drain region of the device. The doped region is implanted with a dopant type opposite the LDD region.