Method of manufacturing semiconductor device, semiconductor device and multilayer wafer structure

Grooves are formed on the front surfaces of first and second semiconductor wafers each including an aggregate of a plurality of semiconductor chips. The grooves each extend on a dicing line set between the semiconductor chips and to have a larger width than the dicing line. Thereafter the first and...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MORIFUJI TADAHIRO, ABE YOSHIYUKI, UEMATSU TOSHIHIDE, MIYAZAKI CHUICHI, SHIMAMOTO HARUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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