Semiconductor devices with asymmetric halo implantation and method of manufacture

Semiconductor devices with asymmetric halo implantation and method of manufacture

a method comprises forming a hardmask over one or more gate structures. The method further comprises forming a photoresist over the hardmask. The method further comprises forming an opening in the photoresist over at least one of the gate structures. The method further comprises stripping the hardma...

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Hauptverfasser: SHAH EVA A, DUNBAR THOMAS J, LIM YEN LI, RANKIN JED H, BHAGAT DARSHANA N
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator SHAH EVA A
DUNBAR THOMAS J
LIM YEN LI
RANKIN JED H
BHAGAT DARSHANA N
description a method comprises forming a hardmask over one or more gate structures. The method further comprises forming a photoresist over the hardmask. The method further comprises forming an opening in the photoresist over at least one of the gate structures. The method further comprises stripping the hardmask that is exposed in the opening and which is over the at least one of the gate structures. The method further comprises removing the photoresist. The method further comprises providing a halo implant on a side of the at least one of the gate structures.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor devices with asymmetric halo implantation and method of manufacture
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