Metrology systems and methods

Various metrology systems and methods are provided. One metrology system includes a light source configured to produce a diffraction-limited light beam, an apodizer configured to shape the light beam in the entrance pupil of illumination optics, and optical elements configured to direct the diffract...

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Hauptverfasser: MANASSEN AMNON, LEVINSKI VLADIMIR, CHUANG YUNG-HO ALEX, NEGRI DARIA, SELIGSON JOEL, HILL ANDREW, SELA ILAN, KANDEL DANIEL, BACHAR OHAD, MARKOWITZ MOSHE, SVIZHER ALEXANDER, ROTEM EFRAIM
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creator MANASSEN AMNON
LEVINSKI VLADIMIR
CHUANG YUNG-HO ALEX
NEGRI DARIA
SELIGSON JOEL
HILL ANDREW
SELA ILAN
KANDEL DANIEL
BACHAR OHAD
MARKOWITZ MOSHE
SVIZHER ALEXANDER
ROTEM EFRAIM
description Various metrology systems and methods are provided. One metrology system includes a light source configured to produce a diffraction-limited light beam, an apodizer configured to shape the light beam in the entrance pupil of illumination optics, and optical elements configured to direct the diffraction-limited light beam from the apodizer to an illumination spot on a grating target on a wafer and to collect scattered light from the grating target. The metrology system further includes a field stop and a detector configured to detect the scattered light that passes through the field stop. In addition, the metrology system includes a computer system configured to determine a characteristic of the grating target using output of the detector.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8873054B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8873054B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8873054B23</originalsourceid><addsrcrecordid>eNrjZJD1TS0pys_JT69UKK4sLknNLVZIzEtRyE0tychPKeZhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhwRYW5sYGpiZORsZEKAEArCIkPQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Metrology systems and methods</title><source>esp@cenet</source><creator>MANASSEN AMNON ; LEVINSKI VLADIMIR ; CHUANG YUNG-HO ALEX ; NEGRI DARIA ; SELIGSON JOEL ; HILL ANDREW ; SELA ILAN ; KANDEL DANIEL ; BACHAR OHAD ; MARKOWITZ MOSHE ; SVIZHER ALEXANDER ; ROTEM EFRAIM</creator><creatorcontrib>MANASSEN AMNON ; LEVINSKI VLADIMIR ; CHUANG YUNG-HO ALEX ; NEGRI DARIA ; SELIGSON JOEL ; HILL ANDREW ; SELA ILAN ; KANDEL DANIEL ; BACHAR OHAD ; MARKOWITZ MOSHE ; SVIZHER ALEXANDER ; ROTEM EFRAIM</creatorcontrib><description>Various metrology systems and methods are provided. One metrology system includes a light source configured to produce a diffraction-limited light beam, an apodizer configured to shape the light beam in the entrance pupil of illumination optics, and optical elements configured to direct the diffraction-limited light beam from the apodizer to an illumination spot on a grating target on a wafer and to collect scattered light from the grating target. The metrology system further includes a field stop and a detector configured to detect the scattered light that passes through the field stop. In addition, the metrology system includes a computer system configured to determine a characteristic of the grating target using output of the detector.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; COLORIMETRY ; ELECTROGRAPHY ; HOLOGRAPHY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MATERIALS THEREFOR ; MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT ; MEASURING ; MEASURING ANGLES ; MEASURING AREAS ; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS ; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; RADIATION PYROMETRY ; TESTING</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20141028&amp;DB=EPODOC&amp;CC=US&amp;NR=8873054B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25566,76549</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20141028&amp;DB=EPODOC&amp;CC=US&amp;NR=8873054B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MANASSEN AMNON</creatorcontrib><creatorcontrib>LEVINSKI VLADIMIR</creatorcontrib><creatorcontrib>CHUANG YUNG-HO ALEX</creatorcontrib><creatorcontrib>NEGRI DARIA</creatorcontrib><creatorcontrib>SELIGSON JOEL</creatorcontrib><creatorcontrib>HILL ANDREW</creatorcontrib><creatorcontrib>SELA ILAN</creatorcontrib><creatorcontrib>KANDEL DANIEL</creatorcontrib><creatorcontrib>BACHAR OHAD</creatorcontrib><creatorcontrib>MARKOWITZ MOSHE</creatorcontrib><creatorcontrib>SVIZHER ALEXANDER</creatorcontrib><creatorcontrib>ROTEM EFRAIM</creatorcontrib><title>Metrology systems and methods</title><description>Various metrology systems and methods are provided. One metrology system includes a light source configured to produce a diffraction-limited light beam, an apodizer configured to shape the light beam in the entrance pupil of illumination optics, and optical elements configured to direct the diffraction-limited light beam from the apodizer to an illumination spot on a grating target on a wafer and to collect scattered light from the grating target. The metrology system further includes a field stop and a detector configured to detect the scattered light that passes through the field stop. In addition, the metrology system includes a computer system configured to determine a characteristic of the grating target using output of the detector.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>COLORIMETRY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MATERIALS THEREFOR</subject><subject>MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT</subject><subject>MEASURING</subject><subject>MEASURING ANGLES</subject><subject>MEASURING AREAS</subject><subject>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</subject><subject>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>RADIATION PYROMETRY</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJD1TS0pys_JT69UKK4sLknNLVZIzEtRyE0tychPKeZhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhwRYW5sYGpiZORsZEKAEArCIkPQ</recordid><startdate>20141028</startdate><enddate>20141028</enddate><creator>MANASSEN AMNON</creator><creator>LEVINSKI VLADIMIR</creator><creator>CHUANG YUNG-HO ALEX</creator><creator>NEGRI DARIA</creator><creator>SELIGSON JOEL</creator><creator>HILL ANDREW</creator><creator>SELA ILAN</creator><creator>KANDEL DANIEL</creator><creator>BACHAR OHAD</creator><creator>MARKOWITZ MOSHE</creator><creator>SVIZHER ALEXANDER</creator><creator>ROTEM EFRAIM</creator><scope>EVB</scope></search><sort><creationdate>20141028</creationdate><title>Metrology systems and methods</title><author>MANASSEN AMNON ; LEVINSKI VLADIMIR ; CHUANG YUNG-HO ALEX ; NEGRI DARIA ; SELIGSON JOEL ; HILL ANDREW ; SELA ILAN ; KANDEL DANIEL ; BACHAR OHAD ; MARKOWITZ MOSHE ; SVIZHER ALEXANDER ; ROTEM EFRAIM</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8873054B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>COLORIMETRY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MATERIALS THEREFOR</topic><topic>MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT</topic><topic>MEASURING</topic><topic>MEASURING ANGLES</topic><topic>MEASURING AREAS</topic><topic>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</topic><topic>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>RADIATION PYROMETRY</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>MANASSEN AMNON</creatorcontrib><creatorcontrib>LEVINSKI VLADIMIR</creatorcontrib><creatorcontrib>CHUANG YUNG-HO ALEX</creatorcontrib><creatorcontrib>NEGRI DARIA</creatorcontrib><creatorcontrib>SELIGSON JOEL</creatorcontrib><creatorcontrib>HILL ANDREW</creatorcontrib><creatorcontrib>SELA ILAN</creatorcontrib><creatorcontrib>KANDEL DANIEL</creatorcontrib><creatorcontrib>BACHAR OHAD</creatorcontrib><creatorcontrib>MARKOWITZ MOSHE</creatorcontrib><creatorcontrib>SVIZHER ALEXANDER</creatorcontrib><creatorcontrib>ROTEM EFRAIM</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MANASSEN AMNON</au><au>LEVINSKI VLADIMIR</au><au>CHUANG YUNG-HO ALEX</au><au>NEGRI DARIA</au><au>SELIGSON JOEL</au><au>HILL ANDREW</au><au>SELA ILAN</au><au>KANDEL DANIEL</au><au>BACHAR OHAD</au><au>MARKOWITZ MOSHE</au><au>SVIZHER ALEXANDER</au><au>ROTEM EFRAIM</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Metrology systems and methods</title><date>2014-10-28</date><risdate>2014</risdate><abstract>Various metrology systems and methods are provided. One metrology system includes a light source configured to produce a diffraction-limited light beam, an apodizer configured to shape the light beam in the entrance pupil of illumination optics, and optical elements configured to direct the diffraction-limited light beam from the apodizer to an illumination spot on a grating target on a wafer and to collect scattered light from the grating target. The metrology system further includes a field stop and a detector configured to detect the scattered light that passes through the field stop. In addition, the metrology system includes a computer system configured to determine a characteristic of the grating target using output of the detector.</abstract><oa>free_for_read</oa></addata></record>
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recordid cdi_epo_espacenet_US8873054B2
source esp@cenet
subjects APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
COLORIMETRY
ELECTROGRAPHY
HOLOGRAPHY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MATERIALS THEREFOR
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT
MEASURING
MEASURING ANGLES
MEASURING AREAS
MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
RADIATION PYROMETRY
TESTING
title Metrology systems and methods
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-17T18%3A47%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MANASSEN%20AMNON&rft.date=2014-10-28&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS8873054B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true