Subtractive plasma etching of a blanket layer of metal or metal alloy

A method of forming at least one metal or metal alloy feature in an integrated circuit is provided. In one embodiment, the method includes providing a material stack including at least an etch mask located on a blanker layer of metal or metal alloy. Exposed portions of the blanket layer of metal or...

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Bibliographische Detailangaben
Hauptverfasser: HOINKIS MARK, FULLER NICHOLAS C. M, JOSEPH ERIC A, YAN CHUN, MIYAZOE HIROYUKI
Format: Patent
Sprache:eng
Schlagworte:
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