Etching method

Etching method

The present invention relates to an etching method of capable of etching a silicon carbide substrate with a higher accuracy. A first etching step in which a silicon carbide substrate K is heated to a temperature equal to or higher than 200 ° C, SF6 gas is supplied into a processing chamber and plasm...

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Hauptverfasser: OISHI AKIMITSU, MURAKAMI SHOICHI
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator OISHI AKIMITSU
MURAKAMI SHOICHI
description The present invention relates to an etching method of capable of etching a silicon carbide substrate with a higher accuracy. A first etching step in which a silicon carbide substrate K is heated to a temperature equal to or higher than 200 ° C, SF6 gas is supplied into a processing chamber and plasma is generated from the SF6 gas, and a bias potential is applied to a platen, thereby isotropically etching the silicon carbide substrate K, and a second etching step in which the silicon carbide substrate K is heated to a temperature equal to or higher than 200 ° C., SF6 gas and O2 gas are supplied into the processing chamber and plasma is generated from the SF6 gas and the O2 gas, and a bias potential is applied to the platen on which the silicon carbide substrate K is placed, thereby etching the silicon carbide substrate K while forming a silicon oxide film as passivation film on the silicon carbide substrate K are alternately repeated.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Etching method
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