Stabilized metal silicides in silicon-germanium regions of transistor elements

Generally, the present disclosure is directed to methods of stabilizing metal silicide contact regions formed in a silicon-germanium active area of a semiconductor device, and devices comprising stabilized metal silicides. One illustrative method disclosed herein includes performing an activation an...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	FITZ CLEMENS, FLACHOWSKY STEFAN, HERRMANN TOM
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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