Strain measurement test module

A test structure for measuring strain in the channel of transistors. A method of correlating transistor performance with channel strain.

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Hauptverfasser: CHUNG JAYHOON, VARTULI CATHERINE BETH, LIAN GUODA
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Sprache:eng
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creator CHUNG JAYHOON
VARTULI CATHERINE BETH
LIAN GUODA
description A test structure for measuring strain in the channel of transistors. A method of correlating transistor performance with channel strain.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8853805B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8853805B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8853805B23</originalsourceid><addsrcrecordid>eNrjZJALLilKzMxTyE1NLC4tSs1NzStRKEktLlHIzU8pzUnlYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxocEWFqbGFgamTkbGRCgBANWcJJ4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Strain measurement test module</title><source>esp@cenet</source><creator>CHUNG JAYHOON ; VARTULI CATHERINE BETH ; LIAN GUODA</creator><creatorcontrib>CHUNG JAYHOON ; VARTULI CATHERINE BETH ; LIAN GUODA</creatorcontrib><description>A test structure for measuring strain in the channel of transistors. A method of correlating transistor performance with channel strain.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT ; MEASURING ; MEASURING ANGLES ; MEASURING AREAS ; MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE ; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS ; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ; MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20141007&amp;DB=EPODOC&amp;CC=US&amp;NR=8853805B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25568,76551</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20141007&amp;DB=EPODOC&amp;CC=US&amp;NR=8853805B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHUNG JAYHOON</creatorcontrib><creatorcontrib>VARTULI CATHERINE BETH</creatorcontrib><creatorcontrib>LIAN GUODA</creatorcontrib><title>Strain measurement test module</title><description>A test structure for measuring strain in the channel of transistors. A method of correlating transistor performance with channel strain.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT</subject><subject>MEASURING</subject><subject>MEASURING ANGLES</subject><subject>MEASURING AREAS</subject><subject>MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE</subject><subject>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</subject><subject>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</subject><subject>MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJALLilKzMxTyE1NLC4tSs1NzStRKEktLlHIzU8pzUnlYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxocEWFqbGFgamTkbGRCgBANWcJJ4</recordid><startdate>20141007</startdate><enddate>20141007</enddate><creator>CHUNG JAYHOON</creator><creator>VARTULI CATHERINE BETH</creator><creator>LIAN GUODA</creator><scope>EVB</scope></search><sort><creationdate>20141007</creationdate><title>Strain measurement test module</title><author>CHUNG JAYHOON ; VARTULI CATHERINE BETH ; LIAN GUODA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8853805B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT</topic><topic>MEASURING</topic><topic>MEASURING ANGLES</topic><topic>MEASURING AREAS</topic><topic>MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE</topic><topic>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</topic><topic>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</topic><topic>MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>CHUNG JAYHOON</creatorcontrib><creatorcontrib>VARTULI CATHERINE BETH</creatorcontrib><creatorcontrib>LIAN GUODA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHUNG JAYHOON</au><au>VARTULI CATHERINE BETH</au><au>LIAN GUODA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Strain measurement test module</title><date>2014-10-07</date><risdate>2014</risdate><abstract>A test structure for measuring strain in the channel of transistors. A method of correlating transistor performance with channel strain.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
MEASURING
MEASURING ANGLES
MEASURING AREAS
MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE
MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS
MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
title Strain measurement test module
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-17T06%3A10%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHUNG%20JAYHOON&rft.date=2014-10-07&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS8853805B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true