Leakage barrier for GaN based HEMT active device

An improved HEMT formed from a GaN material system is disclosed which has reduced gate leakage current and eliminates the problem of current constrictions resulting from deposition of the gate metal over the step discontinuities formed over the gate mesa. One or more GaN based materials are layered...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WOJTOWICZ MICHAEL, SANDHU RAJINDER RANDY, BARSKY MICHAEL EDWARD
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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