Light-emitting diode comprising a carrier body, a mirror layer, and two contact layers

Light-emitting diode comprising a carrier body, a mirror layer, and two contact layers

A light emitting diode includes a semiconductor body including an active region that produces radiation, a carrier body fastened to the semiconductor body on an upper side of the semiconductor body, the carrier body including a luminescence conversion material consisting of a ceramic luminescence co...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: AHLSTEDT MAGNUS, GROLIER VINCENT, AHLSTEDT MIKAEL, EISSLER DIETER
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator AHLSTEDT MAGNUS
GROLIER VINCENT
AHLSTEDT MIKAEL
EISSLER DIETER
description A light emitting diode includes a semiconductor body including an active region that produces radiation, a carrier body fastened to the semiconductor body on an upper side of the semiconductor body, the carrier body including a luminescence conversion material consisting of a ceramic luminescence conversion material, a mirror layer applied to the semiconductor body on an underside of the semiconductor body remote from the upper side, and two contact layers, a first contact layer of the contact layers connected electrically conductively to an n-conducting region of the semiconductor body and a second contact layer of the contact layers connected electrically conductively to a p-conducting region of the semiconductor body.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8796714B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8796714B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8796714B23</originalsourceid><addsrcrecordid>eNrjZAjzyUzPKNFNzc0sKcnMS1dIycxPSVVIzs8tKMosBgkkKiQnFhVlphYpJOWnVOoA-bmZRUX5RQo5iZWpRUB-XopCSXk-UEteSWJyCUS4mIeBNS0xpziVF0pzMyi4uYY4e-imFuTHpxYXJCan5qWWxIcGW5hbmpkbmjgZGROhBABt5zja</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Light-emitting diode comprising a carrier body, a mirror layer, and two contact layers</title><source>esp@cenet</source><creator>AHLSTEDT MAGNUS ; GROLIER VINCENT ; AHLSTEDT MIKAEL ; EISSLER DIETER</creator><creatorcontrib>AHLSTEDT MAGNUS ; GROLIER VINCENT ; AHLSTEDT MIKAEL ; EISSLER DIETER</creatorcontrib><description>A light emitting diode includes a semiconductor body including an active region that produces radiation, a carrier body fastened to the semiconductor body on an upper side of the semiconductor body, the carrier body including a luminescence conversion material consisting of a ceramic luminescence conversion material, a mirror layer applied to the semiconductor body on an underside of the semiconductor body remote from the upper side, and two contact layers, a first contact layer of the contact layers connected electrically conductively to an n-conducting region of the semiconductor body and a second contact layer of the contact layers connected electrically conductively to a p-conducting region of the semiconductor body.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140805&amp;DB=EPODOC&amp;CC=US&amp;NR=8796714B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140805&amp;DB=EPODOC&amp;CC=US&amp;NR=8796714B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>AHLSTEDT MAGNUS</creatorcontrib><creatorcontrib>GROLIER VINCENT</creatorcontrib><creatorcontrib>AHLSTEDT MIKAEL</creatorcontrib><creatorcontrib>EISSLER DIETER</creatorcontrib><title>Light-emitting diode comprising a carrier body, a mirror layer, and two contact layers</title><description>A light emitting diode includes a semiconductor body including an active region that produces radiation, a carrier body fastened to the semiconductor body on an upper side of the semiconductor body, the carrier body including a luminescence conversion material consisting of a ceramic luminescence conversion material, a mirror layer applied to the semiconductor body on an underside of the semiconductor body remote from the upper side, and two contact layers, a first contact layer of the contact layers connected electrically conductively to an n-conducting region of the semiconductor body and a second contact layer of the contact layers connected electrically conductively to a p-conducting region of the semiconductor body.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAjzyUzPKNFNzc0sKcnMS1dIycxPSVVIzs8tKMosBgkkKiQnFhVlphYpJOWnVOoA-bmZRUX5RQo5iZWpRUB-XopCSXk-UEteSWJyCUS4mIeBNS0xpziVF0pzMyi4uYY4e-imFuTHpxYXJCan5qWWxIcGW5hbmpkbmjgZGROhBABt5zja</recordid><startdate>20140805</startdate><enddate>20140805</enddate><creator>AHLSTEDT MAGNUS</creator><creator>GROLIER VINCENT</creator><creator>AHLSTEDT MIKAEL</creator><creator>EISSLER DIETER</creator><scope>EVB</scope></search><sort><creationdate>20140805</creationdate><title>Light-emitting diode comprising a carrier body, a mirror layer, and two contact layers</title><author>AHLSTEDT MAGNUS ; GROLIER VINCENT ; AHLSTEDT MIKAEL ; EISSLER DIETER</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8796714B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>AHLSTEDT MAGNUS</creatorcontrib><creatorcontrib>GROLIER VINCENT</creatorcontrib><creatorcontrib>AHLSTEDT MIKAEL</creatorcontrib><creatorcontrib>EISSLER DIETER</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>AHLSTEDT MAGNUS</au><au>GROLIER VINCENT</au><au>AHLSTEDT MIKAEL</au><au>EISSLER DIETER</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Light-emitting diode comprising a carrier body, a mirror layer, and two contact layers</title><date>2014-08-05</date><risdate>2014</risdate><abstract>A light emitting diode includes a semiconductor body including an active region that produces radiation, a carrier body fastened to the semiconductor body on an upper side of the semiconductor body, the carrier body including a luminescence conversion material consisting of a ceramic luminescence conversion material, a mirror layer applied to the semiconductor body on an underside of the semiconductor body remote from the upper side, and two contact layers, a first contact layer of the contact layers connected electrically conductively to an n-conducting region of the semiconductor body and a second contact layer of the contact layers connected electrically conductively to a p-conducting region of the semiconductor body.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US8796714B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Light-emitting diode comprising a carrier body, a mirror layer, and two contact layers
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T19%3A37%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=AHLSTEDT%20MAGNUS&rft.date=2014-08-05&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS8796714B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true