Post-deposition cleaning methods for substrates with cap layers

One embodiment of the present invention is a method of fabricating an integrated circuit. The method includes providing a substrate having a metal and dielectric damascene metallization layer and depositing substantially on the metal a cap. After deposition of the cap, the substrate is cleaned with...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KOLICS ARTUR, LI SHIJIAN, ARUNAGIRI TIRUCHIRAPALLI, THIE WILLIAM
Format: Patent
Sprache:eng
Schlagworte:
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