Reflective mask blank, method of manufacturing the same, and reflective mask
To solve a problem of reduction in accumulated energy due to backward scattering, leading to degradation in CD linearity, which is caused when a generally used high-contrast resist is used in the manufacture of a reflective mask. A reflective mask blank for manufacturing a reflective mask includes a...
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| creator | TSUKAGOSHI KENTA ONO KAZUNORI HASHIMOTO MASAHIRO FUKUI TOORU |
| description | To solve a problem of reduction in accumulated energy due to backward scattering, leading to degradation in CD linearity, which is caused when a generally used high-contrast resist is used in the manufacture of a reflective mask. A reflective mask blank for manufacturing a reflective mask includes a substrate, a multilayer reflective film which is formed on the substrate and adapted to reflect exposure light, and an absorber film which is formed on the multilayer reflective film and adapted to absorb the exposure light. A resist film for electron beam writing is formed on the absorber film and the contrast value γ of the resist film for electron beam writing is 30 or less. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8785086B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8785086B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8785086B23</originalsourceid><addsrcrecordid>eNrjZPAJSk3LSU0uySxLVchNLM5WSMpJzMvWUchNLcnIT1HITwOK5pWmJSaXlBZl5qUrlGSkKhQn5qbqKCTmpSgUoWrmYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxocEW5hamBhZmTkbGRCgBAPmYNSc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Reflective mask blank, method of manufacturing the same, and reflective mask</title><source>esp@cenet</source><creator>TSUKAGOSHI KENTA ; ONO KAZUNORI ; HASHIMOTO MASAHIRO ; FUKUI TOORU</creator><creatorcontrib>TSUKAGOSHI KENTA ; ONO KAZUNORI ; HASHIMOTO MASAHIRO ; FUKUI TOORU</creatorcontrib><description>To solve a problem of reduction in accumulated energy due to backward scattering, leading to degradation in CD linearity, which is caused when a generally used high-contrast resist is used in the manufacture of a reflective mask. A reflective mask blank for manufacturing a reflective mask includes a substrate, a multilayer reflective film which is formed on the substrate and adapted to reflect exposure light, and an absorber film which is formed on the multilayer reflective film and adapted to absorb the exposure light. A resist film for electron beam writing is formed on the absorber film and the contrast value γ of the resist film for electron beam writing is 30 or less.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140722&DB=EPODOC&CC=US&NR=8785086B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140722&DB=EPODOC&CC=US&NR=8785086B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TSUKAGOSHI KENTA</creatorcontrib><creatorcontrib>ONO KAZUNORI</creatorcontrib><creatorcontrib>HASHIMOTO MASAHIRO</creatorcontrib><creatorcontrib>FUKUI TOORU</creatorcontrib><title>Reflective mask blank, method of manufacturing the same, and reflective mask</title><description>To solve a problem of reduction in accumulated energy due to backward scattering, leading to degradation in CD linearity, which is caused when a generally used high-contrast resist is used in the manufacture of a reflective mask. A reflective mask blank for manufacturing a reflective mask includes a substrate, a multilayer reflective film which is formed on the substrate and adapted to reflect exposure light, and an absorber film which is formed on the multilayer reflective film and adapted to absorb the exposure light. A resist film for electron beam writing is formed on the absorber film and the contrast value γ of the resist film for electron beam writing is 30 or less.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPAJSk3LSU0uySxLVchNLM5WSMpJzMvWUchNLcnIT1HITwOK5pWmJSaXlBZl5qUrlGSkKhQn5qbqKCTmpSgUoWrmYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxocEW5hamBhZmTkbGRCgBAPmYNSc</recordid><startdate>20140722</startdate><enddate>20140722</enddate><creator>TSUKAGOSHI KENTA</creator><creator>ONO KAZUNORI</creator><creator>HASHIMOTO MASAHIRO</creator><creator>FUKUI TOORU</creator><scope>EVB</scope></search><sort><creationdate>20140722</creationdate><title>Reflective mask blank, method of manufacturing the same, and reflective mask</title><author>TSUKAGOSHI KENTA ; ONO KAZUNORI ; HASHIMOTO MASAHIRO ; FUKUI TOORU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8785086B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>TSUKAGOSHI KENTA</creatorcontrib><creatorcontrib>ONO KAZUNORI</creatorcontrib><creatorcontrib>HASHIMOTO MASAHIRO</creatorcontrib><creatorcontrib>FUKUI TOORU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TSUKAGOSHI KENTA</au><au>ONO KAZUNORI</au><au>HASHIMOTO MASAHIRO</au><au>FUKUI TOORU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Reflective mask blank, method of manufacturing the same, and reflective mask</title><date>2014-07-22</date><risdate>2014</risdate><abstract>To solve a problem of reduction in accumulated energy due to backward scattering, leading to degradation in CD linearity, which is caused when a generally used high-contrast resist is used in the manufacture of a reflective mask. A reflective mask blank for manufacturing a reflective mask includes a substrate, a multilayer reflective film which is formed on the substrate and adapted to reflect exposure light, and an absorber film which is formed on the multilayer reflective film and adapted to absorb the exposure light. A resist film for electron beam writing is formed on the absorber film and the contrast value γ of the resist film for electron beam writing is 30 or less.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | Reflective mask blank, method of manufacturing the same, and reflective mask |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T02%3A00%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TSUKAGOSHI%20KENTA&rft.date=2014-07-22&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS8785086B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |