Multi-write endurance and error control coding of non-volatile memories

Multi-write endurance and error control coding of non-volatile memories including a method for receiving write data and a write address of a memory page in a memory. The write data is partitioned into a plurality of sub-blocks, each sub-block including q bits of the write data. Error correction bits...

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Hauptverfasser: JAGMOHAN ASHISH, FRANCESCHINI MICHELE M
Format: Patent
Sprache:eng
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Zusammenfassung:Multi-write endurance and error control coding of non-volatile memories including a method for receiving write data and a write address of a memory page in a memory. The write data is partitioned into a plurality of sub-blocks, each sub-block including q bits of the write data. Error correction bits are generated at the computer in response to the sub-blocks and to an error correction code (ECC). At least one additional sub-block containing the error correction bits are appended to the partitioned write data and a write word is generated. The write word is generated by performing for each of the sub-blocks: selecting a codeword such that the codeword encodes the sub-block and is consistent with current electrical charge levels of the plurality of memory cells associated with the memory page; concatenating the selected codewords to form the write word; and writing the write word to the memory page.