Sub-resolution rod in the transition region

The present disclosure provides a photomask. The photomask includes a first integrated circuit (IC) feature formed on a substrate; and a second IC feature formed on the substrate and configured proximate to the first IC feature. The first and second IC features define a dense pattern having a first...

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Hauptverfasser: LIU RU-GUN, LIN YU-HSIANG, HO JENG-SHIUN, LO LUKE, CHENG MIN-HUNG, SHIH JING-WEI, HUANG SHANG-YU, KUO CHENGNG, LIN HUA-TAI, CHU WEN-HAN, GAU TSAI-SHENG, LIU TINGUN
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creator LIU RU-GUN
LIN YU-HSIANG
HO JENG-SHIUN
LO LUKE
CHENG MIN-HUNG
SHIH JING-WEI
HUANG SHANG-YU
KUO CHENGNG
LIN HUA-TAI
CHU WEN-HAN
GAU TSAI-SHENG
LIU TINGUN
description The present disclosure provides a photomask. The photomask includes a first integrated circuit (IC) feature formed on a substrate; and a second IC feature formed on the substrate and configured proximate to the first IC feature. The first and second IC features define a dense pattern having a first pattern density. The second IC feature is further extended from the dense pattern, forming an isolated pattern having a second pattern density less than the first pattern density. A transition region is defined from the dense pattern to the isolated pattern. The photomask further includes a sub-resolution rod (SRR) formed on the substrate, disposed in the transition region, and connected with the first IC feature.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8765329B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8765329B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8765329B23</originalsourceid><addsrcrecordid>eNrjZNAOLk3SLUotzs8pLcnMz1Moyk9RyMxTKMlIVSgpSswrzoSIpqYDKR4G1rTEnOJUXijNzaDg5hri7KGbWpAfn1pckJicmpdaEh8abGFuZmpsZOlkZEyEEgAnkilr</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Sub-resolution rod in the transition region</title><source>esp@cenet</source><creator>LIU RU-GUN ; LIN YU-HSIANG ; HO JENG-SHIUN ; LO LUKE ; CHENG MIN-HUNG ; SHIH JING-WEI ; HUANG SHANG-YU ; KUO CHENGNG ; LIN HUA-TAI ; CHU WEN-HAN ; GAU TSAI-SHENG ; LIU TINGUN</creator><creatorcontrib>LIU RU-GUN ; LIN YU-HSIANG ; HO JENG-SHIUN ; LO LUKE ; CHENG MIN-HUNG ; SHIH JING-WEI ; HUANG SHANG-YU ; KUO CHENGNG ; LIN HUA-TAI ; CHU WEN-HAN ; GAU TSAI-SHENG ; LIU TINGUN</creatorcontrib><description>The present disclosure provides a photomask. The photomask includes a first integrated circuit (IC) feature formed on a substrate; and a second IC feature formed on the substrate and configured proximate to the first IC feature. The first and second IC features define a dense pattern having a first pattern density. The second IC feature is further extended from the dense pattern, forming an isolated pattern having a second pattern density less than the first pattern density. A transition region is defined from the dense pattern to the isolated pattern. The photomask further includes a sub-resolution rod (SRR) formed on the substrate, disposed in the transition region, and connected with the first IC feature.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140701&amp;DB=EPODOC&amp;CC=US&amp;NR=8765329B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140701&amp;DB=EPODOC&amp;CC=US&amp;NR=8765329B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIU RU-GUN</creatorcontrib><creatorcontrib>LIN YU-HSIANG</creatorcontrib><creatorcontrib>HO JENG-SHIUN</creatorcontrib><creatorcontrib>LO LUKE</creatorcontrib><creatorcontrib>CHENG MIN-HUNG</creatorcontrib><creatorcontrib>SHIH JING-WEI</creatorcontrib><creatorcontrib>HUANG SHANG-YU</creatorcontrib><creatorcontrib>KUO CHENGNG</creatorcontrib><creatorcontrib>LIN HUA-TAI</creatorcontrib><creatorcontrib>CHU WEN-HAN</creatorcontrib><creatorcontrib>GAU TSAI-SHENG</creatorcontrib><creatorcontrib>LIU TINGUN</creatorcontrib><title>Sub-resolution rod in the transition region</title><description>The present disclosure provides a photomask. The photomask includes a first integrated circuit (IC) feature formed on a substrate; and a second IC feature formed on the substrate and configured proximate to the first IC feature. The first and second IC features define a dense pattern having a first pattern density. The second IC feature is further extended from the dense pattern, forming an isolated pattern having a second pattern density less than the first pattern density. A transition region is defined from the dense pattern to the isolated pattern. The photomask further includes a sub-resolution rod (SRR) formed on the substrate, disposed in the transition region, and connected with the first IC feature.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAOLk3SLUotzs8pLcnMz1Moyk9RyMxTKMlIVSgpSswrzoSIpqYDKR4G1rTEnOJUXijNzaDg5hri7KGbWpAfn1pckJicmpdaEh8abGFuZmpsZOlkZEyEEgAnkilr</recordid><startdate>20140701</startdate><enddate>20140701</enddate><creator>LIU RU-GUN</creator><creator>LIN YU-HSIANG</creator><creator>HO JENG-SHIUN</creator><creator>LO LUKE</creator><creator>CHENG MIN-HUNG</creator><creator>SHIH JING-WEI</creator><creator>HUANG SHANG-YU</creator><creator>KUO CHENGNG</creator><creator>LIN HUA-TAI</creator><creator>CHU WEN-HAN</creator><creator>GAU TSAI-SHENG</creator><creator>LIU TINGUN</creator><scope>EVB</scope></search><sort><creationdate>20140701</creationdate><title>Sub-resolution rod in the transition region</title><author>LIU RU-GUN ; LIN YU-HSIANG ; HO JENG-SHIUN ; LO LUKE ; CHENG MIN-HUNG ; SHIH JING-WEI ; HUANG SHANG-YU ; KUO CHENGNG ; LIN HUA-TAI ; CHU WEN-HAN ; GAU TSAI-SHENG ; LIU TINGUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8765329B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>LIU RU-GUN</creatorcontrib><creatorcontrib>LIN YU-HSIANG</creatorcontrib><creatorcontrib>HO JENG-SHIUN</creatorcontrib><creatorcontrib>LO LUKE</creatorcontrib><creatorcontrib>CHENG MIN-HUNG</creatorcontrib><creatorcontrib>SHIH JING-WEI</creatorcontrib><creatorcontrib>HUANG SHANG-YU</creatorcontrib><creatorcontrib>KUO CHENGNG</creatorcontrib><creatorcontrib>LIN HUA-TAI</creatorcontrib><creatorcontrib>CHU WEN-HAN</creatorcontrib><creatorcontrib>GAU TSAI-SHENG</creatorcontrib><creatorcontrib>LIU TINGUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LIU RU-GUN</au><au>LIN YU-HSIANG</au><au>HO JENG-SHIUN</au><au>LO LUKE</au><au>CHENG MIN-HUNG</au><au>SHIH JING-WEI</au><au>HUANG SHANG-YU</au><au>KUO CHENGNG</au><au>LIN HUA-TAI</au><au>CHU WEN-HAN</au><au>GAU TSAI-SHENG</au><au>LIU TINGUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Sub-resolution rod in the transition region</title><date>2014-07-01</date><risdate>2014</risdate><abstract>The present disclosure provides a photomask. The photomask includes a first integrated circuit (IC) feature formed on a substrate; and a second IC feature formed on the substrate and configured proximate to the first IC feature. The first and second IC features define a dense pattern having a first pattern density. The second IC feature is further extended from the dense pattern, forming an isolated pattern having a second pattern density less than the first pattern density. A transition region is defined from the dense pattern to the isolated pattern. The photomask further includes a sub-resolution rod (SRR) formed on the substrate, disposed in the transition region, and connected with the first IC feature.</abstract><oa>free_for_read</oa></addata></record>
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subjects APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
title Sub-resolution rod in the transition region
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