High electron mobility transistor (HEMT) made of layers of Group XIII element nitrides and manufacturing method thereof

The invention relates to a new High Electron Mobility Transistor (HEMT), made essentially of layers of Group XIII element(s) nitride(s). Contrary to currently available transistors of this type, the transistor according to the invention is produced on a homosubstrate made of gallium-containing nitri...

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Bibliographische Detailangaben

Hauptverfasser:	GARCZYNSKI JERZY, SIERZPUTOWSKI LESZEK P, KANBARA YASUO, DWILINSKI ROBERT, DORADZINSKI ROMAN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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