High electron mobility transistor (HEMT) made of layers of Group XIII element nitrides and manufacturing method thereof

High electron mobility transistor (HEMT) made of layers of Group XIII element nitrides and manufacturing method thereof

The invention relates to a new High Electron Mobility Transistor (HEMT), made essentially of layers of Group XIII element(s) nitride(s). Contrary to currently available transistors of this type, the transistor according to the invention is produced on a homosubstrate made of gallium-containing nitri...

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Hauptverfasser: GARCZYNSKI JERZY, SIERZPUTOWSKI LESZEK P, KANBARA YASUO, DWILINSKI ROBERT, DORADZINSKI ROMAN
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator GARCZYNSKI JERZY
SIERZPUTOWSKI LESZEK P
KANBARA YASUO
DWILINSKI ROBERT
DORADZINSKI ROMAN
description The invention relates to a new High Electron Mobility Transistor (HEMT), made essentially of layers of Group XIII element(s) nitride(s). Contrary to currently available transistors of this type, the transistor according to the invention is produced on a homosubstrate made of gallium-containing nitride, has no nucleation layer and its buffer layer is remarkably thinner than in known HEMTs. Preferably, at least the buffer layer, being a part of the transistor according to the present invention, is produced by epitaxial methods and the direction of growth of said layer in an epitaxial process is essentially perpendicular to the direction of growth of the substrate. The invention relates also to a method of manufacturing of High Electron Mobility Transistor (HEMT).
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title High electron mobility transistor (HEMT) made of layers of Group XIII element nitrides and manufacturing method thereof
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