Thin film transistor and method for fabricating the same

Thin film transistor and method for fabricating the same

The present invention relates to a thin-film transistor in a liquid crystal display device and a method of fabricating the same, and the thin-film transistor may be configured by including a first gate electrode formed on an insulating substrate; a first gate insulation film formed on the insulating...

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Hauptverfasser: CHO YONG-SOO, CHOI HOON, MOON KYO-HO
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator CHO YONG-SOO
CHOI HOON
MOON KYO-HO
description The present invention relates to a thin-film transistor in a liquid crystal display device and a method of fabricating the same, and the thin-film transistor may be configured by including a first gate electrode formed on an insulating substrate; a first gate insulation film formed on the insulating substrate including the first gate electrode; an active layer formed on the first gate insulation film; source/drain electrodes formed on the active layer and arranged at both sides of the first gate electrode; a second gate insulation film formed on the active layer and the first gate insulation film including the source/drain electrodes and provided with a contact hole for exposing part of the drain electrode; a second gate electrode overlapped with the first gate electrode on the second gate insulation film; and a pixel electrode electrically connected to the drain electrode through the contact hole.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Thin film transistor and method for fabricating the same
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