Polysilicon/metal contact resistance in deep trench

A method of forming a trench structure that includes forming a metal containing layer on at least the sidewalls of a trench, and forming an undoped semiconductor fill material within the trench. The undoped semiconductor fill material and the metal containing layer are recessed to a first depth with...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	PARRIES PAUL C, PEI CHENGWEN, ZHANG YANLI, MESSENGER BRIAN W, WANG GENG
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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