Transistors having argon gate implants and methods of forming the same

Transistors are provided including first and second source/drain regions, a channel region and a gate stack having a first gate dielectric over a substrate, the first gate dielectric having a dielectric constant higher than a dielectric constant of silicon dioxide, and a metal material in contact wi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SRIVIDYA CANCHEEPURAM V, GEALY F. DANIEL, MATHEW SURAJ J
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!