Method of forming an isolation structure

The present invention relates to a method of forming an isolation structure, in which, a trench is formed in a substrate through a hard mask, and deposition, etch back, deposition, planarization, and etch back are performed in the order to form an isolation material layer of the isolation structure...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHANG CHIA-LUNG, CHEN JEI-MING, TENG WEN-YI, LIN CHIH-HSUN, LEE JUI-MIN, SIE WU-SIAN, LIU CHIHIEN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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