Semiconductor device having dummy bit lines wider than bit lines

Semiconductor device having dummy bit lines wider than bit lines

A method of manufacturing a semiconductor device includes forming a plurality of dummy line patterns arranged at a first pitch on an underlying region, forming first mask patterns having predetermined mask portions formed on long sides of the dummy line patterns, each of the first mask patterns havi...

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Hauptverfasser: HASHIMOTO KOJI, KAMIGAKI TETSUYA, ITO EIJI, KINOSHITA HIDEYUKI
Format: Patent
Sprache:eng
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ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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creator HASHIMOTO KOJI
KAMIGAKI TETSUYA
ITO EIJI
KINOSHITA HIDEYUKI
description A method of manufacturing a semiconductor device includes forming a plurality of dummy line patterns arranged at a first pitch on an underlying region, forming first mask patterns having predetermined mask portions formed on long sides of the dummy line patterns, each of the first mask patterns having a closed-loop shape and surrounding each of the dummy line patterns, removing the dummy line patterns, forming a second mask pattern having a first pattern portion which covers end portions of the first mask patterns and inter-end portions each located between adjacent ones of the end portions, etching the underlying region using the first mask patterns and the second mask pattern as a mask to form trenches each located between adjacent ones of the predetermined mask portions, and filling the trenches with a predetermined material.
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subjects ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
title Semiconductor device having dummy bit lines wider than bit lines
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