Device for generating a plasma discharge for patterning the surface of a substrate

Device for generating a plasma discharge for patterning the surface of a substrate, comprising a first electrode having a first discharge portion and a second electrode having a second discharge portion, a high voltage source for generating a high voltage difference between the first and the second...

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Hauptverfasser: HUIJBREGTS LAURENTIA JOHANNA, BOS EDDY, ROSING PHILIP, BLOM PAULUS PETRUS MARIA, STEVENS ALQUIN ALPHONS ELISABETH
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creator HUIJBREGTS LAURENTIA JOHANNA
BOS EDDY
ROSING PHILIP
BLOM PAULUS PETRUS MARIA
STEVENS ALQUIN ALPHONS ELISABETH
description Device for generating a plasma discharge for patterning the surface of a substrate, comprising a first electrode having a first discharge portion and a second electrode having a second discharge portion, a high voltage source for generating a high voltage difference between the first and the second electrode, and positioning means for positioning the first electrode with respect to the substrate, wherein the positioning means are arranged for selectively positioning the first electrode with respect to the second electrode in a first position in which a distance between the first discharge portion and the second discharge portion is sufficiently small to support the plasma discharge at the high voltage difference, and in a second position in which the distance between the first discharge portion and the second discharge portion is sufficiently large to prevent plasma discharge at the high voltage difference.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8702902B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8702902B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8702902B23</originalsourceid><addsrcrecordid>eNqNyzsOwjAQRdE0FAjYw2wAKTIF0BJA1HzqaAjPjqVgW54J68cIFkB1m3um1XmPl-9ANmZyCMisPjhiSgPLk-nhpes5u--RWBU5fA7tQTJmywVHW4CMd9HCMa8mlgfB4tdZRcfDtTktkWILSUUEaHu7bNa12dZmZ1Z_LG-C4TeH</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Device for generating a plasma discharge for patterning the surface of a substrate</title><source>esp@cenet</source><creator>HUIJBREGTS LAURENTIA JOHANNA ; BOS EDDY ; ROSING PHILIP ; BLOM PAULUS PETRUS MARIA ; STEVENS ALQUIN ALPHONS ELISABETH</creator><creatorcontrib>HUIJBREGTS LAURENTIA JOHANNA ; BOS EDDY ; ROSING PHILIP ; BLOM PAULUS PETRUS MARIA ; STEVENS ALQUIN ALPHONS ELISABETH</creatorcontrib><description>Device for generating a plasma discharge for patterning the surface of a substrate, comprising a first electrode having a first discharge portion and a second electrode having a second discharge portion, a high voltage source for generating a high voltage difference between the first and the second electrode, and positioning means for positioning the first electrode with respect to the substrate, wherein the positioning means are arranged for selectively positioning the first electrode with respect to the second electrode in a first position in which a distance between the first discharge portion and the second discharge portion is sufficiently small to support the plasma discharge at the high voltage difference, and in a second position in which the distance between the first discharge portion and the second discharge portion is sufficiently large to prevent plasma discharge at the high voltage difference.</description><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140422&amp;DB=EPODOC&amp;CC=US&amp;NR=8702902B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140422&amp;DB=EPODOC&amp;CC=US&amp;NR=8702902B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HUIJBREGTS LAURENTIA JOHANNA</creatorcontrib><creatorcontrib>BOS EDDY</creatorcontrib><creatorcontrib>ROSING PHILIP</creatorcontrib><creatorcontrib>BLOM PAULUS PETRUS MARIA</creatorcontrib><creatorcontrib>STEVENS ALQUIN ALPHONS ELISABETH</creatorcontrib><title>Device for generating a plasma discharge for patterning the surface of a substrate</title><description>Device for generating a plasma discharge for patterning the surface of a substrate, comprising a first electrode having a first discharge portion and a second electrode having a second discharge portion, a high voltage source for generating a high voltage difference between the first and the second electrode, and positioning means for positioning the first electrode with respect to the substrate, wherein the positioning means are arranged for selectively positioning the first electrode with respect to the second electrode in a first position in which a distance between the first discharge portion and the second discharge portion is sufficiently small to support the plasma discharge at the high voltage difference, and in a second position in which the distance between the first discharge portion and the second discharge portion is sufficiently large to prevent plasma discharge at the high voltage difference.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyzsOwjAQRdE0FAjYw2wAKTIF0BJA1HzqaAjPjqVgW54J68cIFkB1m3um1XmPl-9ANmZyCMisPjhiSgPLk-nhpes5u--RWBU5fA7tQTJmywVHW4CMd9HCMa8mlgfB4tdZRcfDtTktkWILSUUEaHu7bNa12dZmZ1Z_LG-C4TeH</recordid><startdate>20140422</startdate><enddate>20140422</enddate><creator>HUIJBREGTS LAURENTIA JOHANNA</creator><creator>BOS EDDY</creator><creator>ROSING PHILIP</creator><creator>BLOM PAULUS PETRUS MARIA</creator><creator>STEVENS ALQUIN ALPHONS ELISABETH</creator><scope>EVB</scope></search><sort><creationdate>20140422</creationdate><title>Device for generating a plasma discharge for patterning the surface of a substrate</title><author>HUIJBREGTS LAURENTIA JOHANNA ; BOS EDDY ; ROSING PHILIP ; BLOM PAULUS PETRUS MARIA ; STEVENS ALQUIN ALPHONS ELISABETH</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8702902B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><toplevel>online_resources</toplevel><creatorcontrib>HUIJBREGTS LAURENTIA JOHANNA</creatorcontrib><creatorcontrib>BOS EDDY</creatorcontrib><creatorcontrib>ROSING PHILIP</creatorcontrib><creatorcontrib>BLOM PAULUS PETRUS MARIA</creatorcontrib><creatorcontrib>STEVENS ALQUIN ALPHONS ELISABETH</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HUIJBREGTS LAURENTIA JOHANNA</au><au>BOS EDDY</au><au>ROSING PHILIP</au><au>BLOM PAULUS PETRUS MARIA</au><au>STEVENS ALQUIN ALPHONS ELISABETH</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Device for generating a plasma discharge for patterning the surface of a substrate</title><date>2014-04-22</date><risdate>2014</risdate><abstract>Device for generating a plasma discharge for patterning the surface of a substrate, comprising a first electrode having a first discharge portion and a second electrode having a second discharge portion, a high voltage source for generating a high voltage difference between the first and the second electrode, and positioning means for positioning the first electrode with respect to the substrate, wherein the positioning means are arranged for selectively positioning the first electrode with respect to the second electrode in a first position in which a distance between the first discharge portion and the second discharge portion is sufficiently small to support the plasma discharge at the high voltage difference, and in a second position in which the distance between the first discharge portion and the second discharge portion is sufficiently large to prevent plasma discharge at the high voltage difference.</abstract><oa>free_for_read</oa></addata></record>
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subjects CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
title Device for generating a plasma discharge for patterning the surface of a substrate
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T07%3A05%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HUIJBREGTS%20LAURENTIA%20JOHANNA&rft.date=2014-04-22&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS8702902B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true