Method of fabricating semiconductor device including forming epitaxial blocking layers by nitridation process

A method of fabricating a semiconductor device includes forming gate structures on PMOS and NMOS transistor regions of the semiconductor substrate, forming epitaxial blocking layers on source/drain regions of PMOS and NMOS transistor regions using a nitridation process, then selectively removing one...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	JUNG BYUNG-SUK, LEE SEUNG-JAE, LEE JUNGAN, SHIN YU-GYUN, KWAK DAE-YOUNG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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