Insulated gate transistor, active matrix substrate, liquid crystal display device, and method for producing the same
According to the insulated gate transistor, a gate electrode (11A) is provided on a main surface of a glass substrate (2); a first part of an insulating layer (gate insulating layer (30) and transparent inorganic insulating layer (60)) is thicker than a second part of the insulating layer (gate insu...
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| creator | KAWASAKI KIYOHIRO |
| description | According to the insulated gate transistor, a gate electrode (11A) is provided on a main surface of a glass substrate (2); a first part of an insulating layer (gate insulating layer (30) and transparent inorganic insulating layer (60)) is thicker than a second part of the insulating layer (gate insulating layer (30)), the first part being between (i) the gate electrode (11A) and (ii) a source electrode (12) and a drain electrode (21) of the insulated gate transistor, and the second part being between (i) the gate electrode (11A) and (ii) a channel section (31A) of the insulated gate transistor. This makes it possible to reduce parasitic capacitor without deteriorating characteristics of the transistor. |
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This makes it possible to reduce parasitic capacitor without deteriorating characteristics of the transistor.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FREQUENCY-CHANGING ; NON-LINEAR OPTICS ; OPTICAL ANALOGUE/DIGITAL CONVERTERS ; OPTICAL LOGIC ELEMENTS ; OPTICS ; PHYSICS ; SEMICONDUCTOR DEVICES ; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140325&DB=EPODOC&CC=US&NR=8681307B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140325&DB=EPODOC&CC=US&NR=8681307B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KAWASAKI KIYOHIRO</creatorcontrib><title>Insulated gate transistor, active matrix substrate, liquid crystal display device, and method for producing the same</title><description>According to the insulated gate transistor, a gate electrode (11A) is provided on a main surface of a glass substrate (2); a first part of an insulating layer (gate insulating layer (30) and transparent inorganic insulating layer (60)) is thicker than a second part of the insulating layer (gate insulating layer (30)), the first part being between (i) the gate electrode (11A) and (ii) a source electrode (12) and a drain electrode (21) of the insulated gate transistor, and the second part being between (i) the gate electrode (11A) and (ii) a channel section (31A) of the insulated gate transistor. 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This makes it possible to reduce parasitic capacitor without deteriorating characteristics of the transistor.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
| title | Insulated gate transistor, active matrix substrate, liquid crystal display device, and method for producing the same |
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