Porous lift-off layer for selective removal of deposited films

Porous lift-off layer for selective removal of deposited films

A porous lift off layer facilitates removal of films from surfaces, such as semiconductors. A layer, with porosities typically larger than the film thickness is provided where no film is desired. The film is applied over the porous layer and also where it is desired. The porous material and the film...

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Hauptverfasser: SACHS EMANUEL M, GABOR ANDREW M
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator SACHS EMANUEL M
GABOR ANDREW M
description A porous lift off layer facilitates removal of films from surfaces, such as semiconductors. A layer, with porosities typically larger than the film thickness is provided where no film is desired. The film is applied over the porous layer and also where it is desired. The porous material and the film are then removed from areas where film is not intended. The porous layer can be provided as a slurry, dried to open porosities, or fugitive particles within a field, which disassociate upon the application of heat or solvent. The film can be removed by etchant that enters through porosities that have arisen due to the film not bridging the spaces between solid portions. Etchant attacks both film surfaces. Particles may have diameters of four to ten times the film thickness. Particles may be silica, alumina and ceramics. Porous layers can be used in depressions or on flat surfaces.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8669187B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8669187B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8669187B23</originalsourceid><addsrcrecordid>eNrjZLALyC_KLy1WyMlMK9HNT0tTyEmsTC1SSMsvUihOzUlNLsksS1UoSs3NL0vMUchPU0hJLcgvzixJTVFIy8zJLeZhYE1LzClO5YXS3AwKbq4hzh66QGXxqcUFicmpeakl8aHBFmZmloYW5k5GxkQoAQAFSzB_</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Porous lift-off layer for selective removal of deposited films</title><source>esp@cenet</source><creator>SACHS EMANUEL M ; GABOR ANDREW M</creator><creatorcontrib>SACHS EMANUEL M ; GABOR ANDREW M</creatorcontrib><description>A porous lift off layer facilitates removal of films from surfaces, such as semiconductors. A layer, with porosities typically larger than the film thickness is provided where no film is desired. The film is applied over the porous layer and also where it is desired. The porous material and the film are then removed from areas where film is not intended. The porous layer can be provided as a slurry, dried to open porosities, or fugitive particles within a field, which disassociate upon the application of heat or solvent. The film can be removed by etchant that enters through porosities that have arisen due to the film not bridging the spaces between solid portions. Etchant attacks both film surfaces. Particles may have diameters of four to ten times the film thickness. Particles may be silica, alumina and ceramics. Porous layers can be used in depressions or on flat surfaces.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140311&amp;DB=EPODOC&amp;CC=US&amp;NR=8669187B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140311&amp;DB=EPODOC&amp;CC=US&amp;NR=8669187B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SACHS EMANUEL M</creatorcontrib><creatorcontrib>GABOR ANDREW M</creatorcontrib><title>Porous lift-off layer for selective removal of deposited films</title><description>A porous lift off layer facilitates removal of films from surfaces, such as semiconductors. A layer, with porosities typically larger than the film thickness is provided where no film is desired. The film is applied over the porous layer and also where it is desired. The porous material and the film are then removed from areas where film is not intended. The porous layer can be provided as a slurry, dried to open porosities, or fugitive particles within a field, which disassociate upon the application of heat or solvent. The film can be removed by etchant that enters through porosities that have arisen due to the film not bridging the spaces between solid portions. Etchant attacks both film surfaces. Particles may have diameters of four to ten times the film thickness. Particles may be silica, alumina and ceramics. Porous layers can be used in depressions or on flat surfaces.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLALyC_KLy1WyMlMK9HNT0tTyEmsTC1SSMsvUihOzUlNLsksS1UoSs3NL0vMUchPU0hJLcgvzixJTVFIy8zJLeZhYE1LzClO5YXS3AwKbq4hzh66QGXxqcUFicmpeakl8aHBFmZmloYW5k5GxkQoAQAFSzB_</recordid><startdate>20140311</startdate><enddate>20140311</enddate><creator>SACHS EMANUEL M</creator><creator>GABOR ANDREW M</creator><scope>EVB</scope></search><sort><creationdate>20140311</creationdate><title>Porous lift-off layer for selective removal of deposited films</title><author>SACHS EMANUEL M ; GABOR ANDREW M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8669187B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SACHS EMANUEL M</creatorcontrib><creatorcontrib>GABOR ANDREW M</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SACHS EMANUEL M</au><au>GABOR ANDREW M</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Porous lift-off layer for selective removal of deposited films</title><date>2014-03-11</date><risdate>2014</risdate><abstract>A porous lift off layer facilitates removal of films from surfaces, such as semiconductors. A layer, with porosities typically larger than the film thickness is provided where no film is desired. The film is applied over the porous layer and also where it is desired. The porous material and the film are then removed from areas where film is not intended. The porous layer can be provided as a slurry, dried to open porosities, or fugitive particles within a field, which disassociate upon the application of heat or solvent. The film can be removed by etchant that enters through porosities that have arisen due to the film not bridging the spaces between solid portions. Etchant attacks both film surfaces. Particles may have diameters of four to ten times the film thickness. Particles may be silica, alumina and ceramics. Porous layers can be used in depressions or on flat surfaces.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Porous lift-off layer for selective removal of deposited films
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T03%3A39%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SACHS%20EMANUEL%20M&rft.date=2014-03-11&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS8669187B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true