Method of forming a nanostructure
A method of forming a discrete nanostructured element at one or more predetermined locations on a substrate is presented. The method includes forming a mask member over the substrate. A window is formed in the mask member at each of one or more locations at which it is required to form the nanostruc...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | CHEW HAN GUAN CHOI WEE KIONG LIEW TZE HAW ZHENG FEI |
description | A method of forming a discrete nanostructured element at one or more predetermined locations on a substrate is presented. The method includes forming a mask member over the substrate. A window is formed in the mask member at each of one or more locations at which it is required to form the nanostructured element thereby to expose a portion of a surface of the substrate. A portion of the substrate exposed by the window at the one or more locations is removed to form one or more recesses in the substrate. The method further includes forming a layer of a nanostructure medium over a surface of the recess and annealing the structure thereby to form the nanostructured element in each of the one or more recesses. The nanostructured element includes a portion of the nanostructure medium and has an external dimension along at least two substantially orthogonal directions of less than substantially 100 nm. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8668833B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8668833B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8668833B23</originalsourceid><addsrcrecordid>eNrjZFD0TS3JyE9RyE9TSMsvys3MS1dIVMhLzMsvLikqTS4pLUrlYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxocEWZmYWFsbGTkbGRCgBAEDbJZQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method of forming a nanostructure</title><source>esp@cenet</source><creator>CHEW HAN GUAN ; CHOI WEE KIONG ; LIEW TZE HAW ; ZHENG FEI</creator><creatorcontrib>CHEW HAN GUAN ; CHOI WEE KIONG ; LIEW TZE HAW ; ZHENG FEI</creatorcontrib><description>A method of forming a discrete nanostructured element at one or more predetermined locations on a substrate is presented. The method includes forming a mask member over the substrate. A window is formed in the mask member at each of one or more locations at which it is required to form the nanostructured element thereby to expose a portion of a surface of the substrate. A portion of the substrate exposed by the window at the one or more locations is removed to form one or more recesses in the substrate. The method further includes forming a layer of a nanostructure medium over a surface of the recess and annealing the structure thereby to form the nanostructured element in each of the one or more recesses. The nanostructured element includes a portion of the nanostructure medium and has an external dimension along at least two substantially orthogonal directions of less than substantially 100 nm.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DECORATIVE ARTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; LAYERED PRODUCTS ; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM ; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ; MANUFACTURE OR TREATMENT THEREOF ; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES ; MICROSTRUCTURAL TECHNOLOGY ; MOSAICS ; NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS ; NANOTECHNOLOGY ; PAPERHANGING ; PERFORMING OPERATIONS ; PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS ; PRODUCING DECORATIVE EFFECTS ; SEMICONDUCTOR DEVICES ; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES ; TARSIA WORK ; TRANSPORTING</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140311&DB=EPODOC&CC=US&NR=8668833B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140311&DB=EPODOC&CC=US&NR=8668833B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHEW HAN GUAN</creatorcontrib><creatorcontrib>CHOI WEE KIONG</creatorcontrib><creatorcontrib>LIEW TZE HAW</creatorcontrib><creatorcontrib>ZHENG FEI</creatorcontrib><title>Method of forming a nanostructure</title><description>A method of forming a discrete nanostructured element at one or more predetermined locations on a substrate is presented. The method includes forming a mask member over the substrate. A window is formed in the mask member at each of one or more locations at which it is required to form the nanostructured element thereby to expose a portion of a surface of the substrate. A portion of the substrate exposed by the window at the one or more locations is removed to form one or more recesses in the substrate. The method further includes forming a layer of a nanostructure medium over a surface of the recess and annealing the structure thereby to form the nanostructured element in each of the one or more recesses. The nanostructured element includes a portion of the nanostructure medium and has an external dimension along at least two substantially orthogonal directions of less than substantially 100 nm.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DECORATIVE ARTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>LAYERED PRODUCTS</subject><subject>LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM</subject><subject>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</subject><subject>MANUFACTURE OR TREATMENT THEREOF</subject><subject>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</subject><subject>MICROSTRUCTURAL TECHNOLOGY</subject><subject>MOSAICS</subject><subject>NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS</subject><subject>NANOTECHNOLOGY</subject><subject>PAPERHANGING</subject><subject>PERFORMING OPERATIONS</subject><subject>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</subject><subject>PRODUCING DECORATIVE EFFECTS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</subject><subject>TARSIA WORK</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD0TS3JyE9RyE9TSMsvys3MS1dIVMhLzMsvLikqTS4pLUrlYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxocEWZmYWFsbGTkbGRCgBAEDbJZQ</recordid><startdate>20140311</startdate><enddate>20140311</enddate><creator>CHEW HAN GUAN</creator><creator>CHOI WEE KIONG</creator><creator>LIEW TZE HAW</creator><creator>ZHENG FEI</creator><scope>EVB</scope></search><sort><creationdate>20140311</creationdate><title>Method of forming a nanostructure</title><author>CHEW HAN GUAN ; CHOI WEE KIONG ; LIEW TZE HAW ; ZHENG FEI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8668833B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DECORATIVE ARTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>LAYERED PRODUCTS</topic><topic>LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM</topic><topic>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</topic><topic>MANUFACTURE OR TREATMENT THEREOF</topic><topic>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</topic><topic>MICROSTRUCTURAL TECHNOLOGY</topic><topic>MOSAICS</topic><topic>NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS</topic><topic>NANOTECHNOLOGY</topic><topic>PAPERHANGING</topic><topic>PERFORMING OPERATIONS</topic><topic>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</topic><topic>PRODUCING DECORATIVE EFFECTS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</topic><topic>TARSIA WORK</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>CHEW HAN GUAN</creatorcontrib><creatorcontrib>CHOI WEE KIONG</creatorcontrib><creatorcontrib>LIEW TZE HAW</creatorcontrib><creatorcontrib>ZHENG FEI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHEW HAN GUAN</au><au>CHOI WEE KIONG</au><au>LIEW TZE HAW</au><au>ZHENG FEI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method of forming a nanostructure</title><date>2014-03-11</date><risdate>2014</risdate><abstract>A method of forming a discrete nanostructured element at one or more predetermined locations on a substrate is presented. The method includes forming a mask member over the substrate. A window is formed in the mask member at each of one or more locations at which it is required to form the nanostructured element thereby to expose a portion of a surface of the substrate. A portion of the substrate exposed by the window at the one or more locations is removed to form one or more recesses in the substrate. The method further includes forming a layer of a nanostructure medium over a surface of the recess and annealing the structure thereby to form the nanostructured element in each of the one or more recesses. The nanostructured element includes a portion of the nanostructure medium and has an external dimension along at least two substantially orthogonal directions of less than substantially 100 nm.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US8668833B2 |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS DECORATIVE ARTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MANUFACTURE OR TREATMENT THEREOF MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES MICROSTRUCTURAL TECHNOLOGY MOSAICS NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS NANOTECHNOLOGY PAPERHANGING PERFORMING OPERATIONS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS PRODUCING DECORATIVE EFFECTS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TARSIA WORK TRANSPORTING |
title | Method of forming a nanostructure |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-12T23%3A03%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHEW%20HAN%20GUAN&rft.date=2014-03-11&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS8668833B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |