Non-volatile memory devices having resistance changeable elements and related systems and methods

A non-volatile memory device may include a first wordline on a substrate, an insulating layer on the first wordline, and a second wordline on the insulating layer so that the insulating layer is between the first and second wordlines. A bit pillar may extend adjacent the first wordline, the insulati...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BAEK IN-GYU, SONG WOO-BIN, KANG SANG-BOM, PARK HEUNG-KYU, PARK IN-SUN, LEE BYEONGAN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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