Germanium complexes with amidine derivative ligand and process for preparing the same
Provided is a germanium complex represented by Chemical Formula 1 wherein Y1 and Y2 are independently selected from R3, NR4R5 or OR6, and R1 through R6 independently represent (Ci-C7) alkyl. The provided germanium complex with an amidine derivative ligand is thermally stable, is highly volatile, and...
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creator | LEE SANG KYUNG YUN SU HYONG SHIN SU JUNG HAN SUNG WON JUNG JAE SUN PARK YONG JOO KIM MINCHAN SUNG KI WHAN |
description | Provided is a germanium complex represented by Chemical Formula 1 wherein Y1 and Y2 are independently selected from R3, NR4R5 or OR6, and R1 through R6 independently represent (Ci-C7) alkyl. The provided germanium complex with an amidine derivative ligand is thermally stable, is highly volatile, and does not include halogen components. Therefore, it may be usefully used as a precursor to produce high-quality germanium thin film or germanium-containing compound thin film by metal organic chemical vapor deposition (MOCVD) or atomic layer deposition (ALD). |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8663736B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8663736B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8663736B23</originalsourceid><addsrcrecordid>eNqNijsOwjAQBdNQIOAOewEaLBlqUIAeUkcr-yVZyT_ZJnB8QOIAFKOZYpZNd0H2HOThyUSfHF4o9JQ6EXuxEkAWWWauMoOcjBwsfUk5GpRCQ8yfRuIsYaQ6gQp7rJvFwK5g8_OqoXN7P123SLFHSWwQUPvudtBa7ZU-7tQfyxuiDDlO</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Germanium complexes with amidine derivative ligand and process for preparing the same</title><source>esp@cenet</source><creator>LEE SANG KYUNG ; YUN SU HYONG ; SHIN SU JUNG ; HAN SUNG WON ; JUNG JAE SUN ; PARK YONG JOO ; KIM MINCHAN ; SUNG KI WHAN</creator><creatorcontrib>LEE SANG KYUNG ; YUN SU HYONG ; SHIN SU JUNG ; HAN SUNG WON ; JUNG JAE SUN ; PARK YONG JOO ; KIM MINCHAN ; SUNG KI WHAN</creatorcontrib><description>Provided is a germanium complex represented by Chemical Formula 1 wherein Y1 and Y2 are independently selected from R3, NR4R5 or OR6, and R1 through R6 independently represent (Ci-C7) alkyl. The provided germanium complex with an amidine derivative ligand is thermally stable, is highly volatile, and does not include halogen components. Therefore, it may be usefully used as a precursor to produce high-quality germanium thin film or germanium-containing compound thin film by metal organic chemical vapor deposition (MOCVD) or atomic layer deposition (ALD).</description><language>eng</language><subject>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; ORGANIC CHEMISTRY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140304&DB=EPODOC&CC=US&NR=8663736B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140304&DB=EPODOC&CC=US&NR=8663736B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE SANG KYUNG</creatorcontrib><creatorcontrib>YUN SU HYONG</creatorcontrib><creatorcontrib>SHIN SU JUNG</creatorcontrib><creatorcontrib>HAN SUNG WON</creatorcontrib><creatorcontrib>JUNG JAE SUN</creatorcontrib><creatorcontrib>PARK YONG JOO</creatorcontrib><creatorcontrib>KIM MINCHAN</creatorcontrib><creatorcontrib>SUNG KI WHAN</creatorcontrib><title>Germanium complexes with amidine derivative ligand and process for preparing the same</title><description>Provided is a germanium complex represented by Chemical Formula 1 wherein Y1 and Y2 are independently selected from R3, NR4R5 or OR6, and R1 through R6 independently represent (Ci-C7) alkyl. The provided germanium complex with an amidine derivative ligand is thermally stable, is highly volatile, and does not include halogen components. Therefore, it may be usefully used as a precursor to produce high-quality germanium thin film or germanium-containing compound thin film by metal organic chemical vapor deposition (MOCVD) or atomic layer deposition (ALD).</description><subject>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>ORGANIC CHEMISTRY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNijsOwjAQBdNQIOAOewEaLBlqUIAeUkcr-yVZyT_ZJnB8QOIAFKOZYpZNd0H2HOThyUSfHF4o9JQ6EXuxEkAWWWauMoOcjBwsfUk5GpRCQ8yfRuIsYaQ6gQp7rJvFwK5g8_OqoXN7P123SLFHSWwQUPvudtBa7ZU-7tQfyxuiDDlO</recordid><startdate>20140304</startdate><enddate>20140304</enddate><creator>LEE SANG KYUNG</creator><creator>YUN SU HYONG</creator><creator>SHIN SU JUNG</creator><creator>HAN SUNG WON</creator><creator>JUNG JAE SUN</creator><creator>PARK YONG JOO</creator><creator>KIM MINCHAN</creator><creator>SUNG KI WHAN</creator><scope>EVB</scope></search><sort><creationdate>20140304</creationdate><title>Germanium complexes with amidine derivative ligand and process for preparing the same</title><author>LEE SANG KYUNG ; YUN SU HYONG ; SHIN SU JUNG ; HAN SUNG WON ; JUNG JAE SUN ; PARK YONG JOO ; KIM MINCHAN ; SUNG KI WHAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8663736B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>ORGANIC CHEMISTRY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE SANG KYUNG</creatorcontrib><creatorcontrib>YUN SU HYONG</creatorcontrib><creatorcontrib>SHIN SU JUNG</creatorcontrib><creatorcontrib>HAN SUNG WON</creatorcontrib><creatorcontrib>JUNG JAE SUN</creatorcontrib><creatorcontrib>PARK YONG JOO</creatorcontrib><creatorcontrib>KIM MINCHAN</creatorcontrib><creatorcontrib>SUNG KI WHAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE SANG KYUNG</au><au>YUN SU HYONG</au><au>SHIN SU JUNG</au><au>HAN SUNG WON</au><au>JUNG JAE SUN</au><au>PARK YONG JOO</au><au>KIM MINCHAN</au><au>SUNG KI WHAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Germanium complexes with amidine derivative ligand and process for preparing the same</title><date>2014-03-04</date><risdate>2014</risdate><abstract>Provided is a germanium complex represented by Chemical Formula 1 wherein Y1 and Y2 are independently selected from R3, NR4R5 or OR6, and R1 through R6 independently represent (Ci-C7) alkyl. The provided germanium complex with an amidine derivative ligand is thermally stable, is highly volatile, and does not include halogen components. Therefore, it may be usefully used as a precursor to produce high-quality germanium thin film or germanium-containing compound thin film by metal organic chemical vapor deposition (MOCVD) or atomic layer deposition (ALD).</abstract><oa>free_for_read</oa></addata></record> |
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subjects | ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | Germanium complexes with amidine derivative ligand and process for preparing the same |
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