Integration of non-noble DRAM electrode

Integration of non-noble DRAM electrode

A method for forming a capacitor stack is described. In some embodiments of the present invention, a first electrode structure is comprised of multiple materials. A first material is formed above the substrate. A portion of the first material is etched. A second material is formed above the first ma...

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Hauptverfasser: MALHOTRA SANDRA, RICHARDSON GERALD, HAYWOOD EDWARD L, ODE HIROYUKI, CHEN HANHONG, DEWEERD WIM Y
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator MALHOTRA SANDRA
RICHARDSON GERALD
HAYWOOD EDWARD L
ODE HIROYUKI
CHEN HANHONG
DEWEERD WIM Y
description A method for forming a capacitor stack is described. In some embodiments of the present invention, a first electrode structure is comprised of multiple materials. A first material is formed above the substrate. A portion of the first material is etched. A second material is formed above the first material. A portion of the second material is etched. Optionally, the first electrode structure receives an anneal treatment. A dielectric material is formed above the first electrode structure. Optionally, the dielectric material receives an anneal treatment. A second electrode material is formed above the dielectric material. Typically, the capacitor stack receives an anneal treatment.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Integration of non-noble DRAM electrode
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