Semiconductor memory device and a method of manufacturing the same

A memory cell of an SRAM has two drive MISFETs and two vertical MISFETs. The p channel vertical MISFETs are formed above the n channel drive MISFETs. The vertical MISFETs respectively mainly include a laminate formed of a lower semiconductor layer, intermediate semiconductor layer and upper semicond...

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Bibliographische Detailangaben

Hauptverfasser:	TAKAHASHI YASUHIKO, CHAKIHARA HIRAKU, OKUYAMA KOUSUKE, MONIWA MASAHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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